SML2308CSM4
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
ENHANCEMENT MODE
MOSFET
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
5.59 ± 0.13
(0.22 ± 0.005)
FEATURES
• B
VDSS
=60V
• I
D
= 2A
0.23 min.
(0.009)
0.64 ± 0.08
(0.025 ± 0.003)
0.23 rad.
(0.009)
3
2
1.27 ± 0.05
(0.05 ± 0.002)
3.81 ± 0.13
(0.15 ± 0.005)
4
1
• R
DS(ON)
= 0.16Ω
• Hermetic Surface Mount Package
• Screening Option Available
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
LCC3 PACKAGE (MO-041BA)
Underside View
PAD 1 - Drain
PAD 2 - N/C
PAD 3 - Source
PAD 4 - Gate
The SML2308CSM4 is a very low on state
resistance N-Channel enhancement mode
mosfet in a Ceramic Surface Mount pack-
age designed for high rel applications:
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
STG
, T
J
NOTE:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Power Dissipation
@T
A
= 25°C
@T
A
= 25°C
@T
A
= 100°C
Thermal Resistance Junction to Ambient
Maximum Junction and Storage Temperature Range
60V
±
20V
2A
10A
0.8W
0.32W
156°C/W
-55 to +150°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5331
Issue 1
SML2308CSM4
ELECTRICAL RATINGS
(T
A
= 25°C unless otherwise stated)
Characteristic
V
(BR)DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
STATIC CHARACTERISTICS
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate – Source Leakage Current
Zero Gate Voltage Drain Current
On State Drain Current
1
Drain Source On-State Resistance
1
Forward Transconductance
1
Diode Forward Voltage
1
DYNAMIC CHARACTERISTICS
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
Turn–on Delay Time
Rise Time
Turn–off Delay Time
Fall Time
V
GS
= 10V
V
DS
= 30V
I
D
= 2.0A
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
DD
= 30V
I
D
= 1A
V
GEN
= 4.5V
R
L
= 30Ω
R
G
= 6Ω
4.8
0.8
1.0
240
50
15
7
10
17
6
15
20
35
15
ns
pF
10
nc
Test Conditions
V
GS
= 0V
V
DS
= V
GS
V
GS
=
±
20V
V
DS
= 60V
V
DS
=
≥4.5V
V
DS
=
≥4.5V
V
GS
= 10V
V
GS
= 4.5V
V
DS
= 4.5V
V
GS
= 0V
I
D
= 250µA
I
D
= 250µA
V
GS
= 0V
V
GS
= 0V
T
J
= 55°C
V
GS
= 10V
V
GS
= 4.5V
I
D
= 2.0A
I
D
= 1.7A
I
D
= 2.0A
I
S
= 1.0A
6
4
0.15
0.20
4.6
0.77
1.2
0.2
0.25
Min.
60
1.5
Typ.
Max. Unit
V
±
100
0.5
10
nA
µA
A
Ω
S
V
SD
NOTES:
1) Pulse Test: Pulse Width = 300µs , Duty Cycle
≤
2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5331
Issue 1
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