TSM1N60S
600V N-Channel Power MOSFET
TO-92
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
600
R
DS(on)
(Ω)
11 @ V
GS
=10V
I
D
(A)
0.3
General Description
The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
●
●
●
●
●
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
I
DSS
and V
DS(on)
specified at elevated temperature
Block Diagram
Ordering Information
Part No.
TSM1N60SCT B0
TSM1N60SCT A3
Package
TO-92
TO-92
Packing
1Kpcs / Bulk
2Kpcs / Ammo
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25Ω)
Total Power Dissipation @T
C
= 25 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Lead Temperature (1/8” from case)
o
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
EAS
P
DTOT
T
J
T
J
, T
STG
T
L
Limit
600
±30
0.3
1.2
1
50
3
+150
-55 to +150
10
Unit
V
V
A
A
A
mJ
o
o
W
C
C
S
1/8
Version: C07
TSM1N60S
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Lead
Notes: Surface mounted on FR4 board t
≤
10sec
Symbol
RӨ
JA
RӨ
JC
RӨ
JL
Limit
125
50
40
Unit
o
o
o
C/W
C/W
C/W
Electrical Specifications
(Ta=25
o
C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 0.3A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 600V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
≧50V,
I
D
= 0.3A
I
S
= 1A, V
GS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
600
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
11
--
--
--
5
--
4.5
1.1
2
155
20
3
10
20
25
24
Max
--
13
4.0
10
± 100
--
1.5
6
--
--
200
26
4
30
50
45
60
Unit
V
Ω
V
uA
nA
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 400V, I
D
= 1A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
GS
= 10V, I
D
= 1A,
V
DS
= 300V, R
G
= 6Ω
t
r
t
d(off)
nS
Turn-Off Fall Time
t
f
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/8
Version: C07
TSM1N60S
600V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/8
Version: C07
TSM1N60S
600V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/8
Version: C07
TSM1N60S
600V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
E
AS
Test Circuit & Waveform
5/8
Version: C07
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