TSM2N7002K
60V N-Channel MOSFET
SOT-23
SOT-323
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
( )
60
2 @ V
GS
= 10V
4 @ V
GS
= 4.5V
I
D
(mA)
300
200
Features
●
●
●
●
Low On-Resistance
ESD Protected 2KV
High Speed Switching
Low Voltage Drive
Block Diagram
Ordering Information
Part No.
TSM2N7002KCX RF
TSM2N7002KCX RFG
TSM2N7002KCU RF
TSM2N7002KCU RFG
Package
SOT-23
SOT-23
SOT-323
SOT-323
Packing
3Kpcs / 7” Reel
3Kpcs / 7” Reel
3Kpcs / 7” Reel
3Kpcs / 7” Reel
N-Channel MOSFET
Note:
“G” denotes for Halogen Free
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous @ T
A
=25ºC
Pulsed
Drain Reverse Current
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Continuous @ T
A
=25ºC
Pulsed
Symbol
V
DS
V
GS
I
D
I
DM
I
DR
I
DMR
P
D
T
J
T
J
, T
STG
Limit
60
±20
300
Unit
V
V
mA
800
300
mA
800
300
+150
-55 to +150
mW
o
o
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Symbol
T
L
RӨ
JA
Limit
5
350
Unit
S
o
C/W
Notes:
a. Pulse width
≤300us,
Duty cycle
≤2%
b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch.
c. The power dissipation of the package may result in a continuous drain current.
1/7
Version: C11
TSM2N7002K
60V N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
=0V, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
GS
=±20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
GS
=10V, I
D
=300mA
V
GS
=4.5V, I
D
=100mA
V
DS
=10V, I
D
=200mA
I
S
=300mA, V
GS
=0V
V
DS
=10V, I
D
= 250mA,
V
GS
=4.5V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
g
fs
V
SD
Min
60
1.0
--
--
--
--
100
--
Typ
--
1.5
--
--
1.2
2
--
0.8
Max
--
2.5
±10
1.0
2
4
--
1.4
Unit
V
V
uA
uA
mS
V
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Q
g
C
iss
C
oss
C
rss
t
d(on)
--
--
--
--
--
--
0.4
30
6
2.5
--
--
0.6
--
--
--
25
35
nC
pF
Turn-On Delay Time
V
DD
=30V, R
G
=10
I
D
=200mA, V
GEN
=10V,
Turn-Off Delay Time
t
d(off)
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
nS
2/7
Version: C11
TSM2N7002K
60V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: C11
TSM2N7002K
60V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: C11
TSM2N7002K
60V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
bp
C
D
E
e
e1
H
E
L
P
Q
V
W
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
1.00 BSC
0.039 BSC
--
0.10
--
0.004
0.37
0.42
0.014
0.016
0.15
0.09
0.005
0.004
2.80
3.00
0.118
0.110
1.20
1.40
0.047
0.055
1.9 BSC
0.075 BSC
0.95 BSC
0.037 BSC
2.35
2.45
0.093
0.096
0.15
0.45
0.005
0.018
0.022
0.45
0.55
0.018
0.2 BSC
0.007 BSC
0.1 BSC
0.004 BSC
Marking Diagram
5/7
Version: C11
京公网安备 11010802033920号
EEWORLD
