TSS42U/43U
0.2 Amp Surface Mount Schottky Barrier Diode
Small Signal Diode
0603
W
L
T
C
Features
Designed for mounting on small surface
Extremely thin / leadless package
Low capacitance
Low forward voltage drop
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
D
Unit (mm)
Dimensions
L
Unit (inch)
Min
0.063
0.031
0.028
Min
1.60
0.80
0.70
Max
1.80
1.00
0.85
Max
0.071
0.039
0.033
Mechanical Data
Case : 0603 Standard package, molded plastic
Terminals: Gold plated, solderable
per MIL-STD-750, Method 2026.
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight :0.003 gram (appeox.)
W
T
C
D
0.45 (Typical)
0.7 (Typical)
0.018 (Typical)
0.27 (Typical)
Pin Configuration
Ordering Information
Suggested Footprint Dimensions
Part No.
TSS42U
TSS43U
Package
0603
0603
Packing
4K / 7" Reel
4K / 7" Reel
Marking Packing code
BD
BE
RZ / RZG
RZ / RZG
Y (x2)
X (x2)
X1
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Dimensions
X1
Y
X
Value (in mm)
2.70
0.80
1.37
Maximum Ratings
Type Number
Repetitive Peak Reverse Voltage
Reverse Voltage
RMS reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse Width = 8.3 mS
( Singal Half -wave )
Power Dissipation
Forward Voltage
TS42U / 43U, IF = 200mA
TS42U, IF = 10mA
TS42U, IF = 50mA
TS43U, IF = 2mA
TS43U, IF = 15mA
Reverse Leakage Current
Reverse Recovery Time (Note 2.)
Thermal Resistance (Junction to Ambient)
Operation Junction Temperature
VR = 25V
I
R
C
J
Trr
RθJA
T
J
Typical Capacitance between terminals (VR = 1V, f = 1.0MHZ)
V
F
P
D
150
1.00
0.40
0.65
0.33
0.45
0.5
10
5
667
125
uA
pF
nS
°C/W
°C
°C
V
mW
I
FSM
4.0
A
Symbol
V
RRM
V
R
V
R
(
RMS
)
I
O
I
FRM
Value
30
30
21
200
500
Units
V
V
V
mA
mA
-55 to + 125
Storage Temperature Range
T
J
, T
STG
Notes: 1. The suggested Footprint dimensions have been provided for reference only, as actual pad layouts
may vary despending on application.
2. Test conditions: IF = IR = 10mA, Irr = 0.1 x IR, RL = 100
Ω
Version :B10
Embedded System
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