EEWORLDEEWORLDEEWORLD

Part Number

Search

TSC128D_11

Description
High Voltage NPN Transistor with Diode
File Size196KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Compare View All

TSC128D_11 Overview

High Voltage NPN Transistor with Diode

TSC128D
High Voltage NPN Transistor with Diode
TO-220
TO-263
2
(D PAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
400V
700V
4A
1.5V @ I
C
/ I
B
= 4A / 1A
Features
Build-in Free-wheeling Diode Makes Efficient Anti-
saturation Operation
No Need to Interest an hfe Value Because of Low
Variable Storage-time Spread Even Though Comer
Spirit Product.
Low Base Drive Requirement
Suitable for Half Bridge Light Ballast Application
Block Diagram
Structure
Silicon Triple Diffused Type
NPN Silicon Transistor
Integrated Anti-parallel Collector-Emitter Diode
Ordering Information
Part No.
TSC128DCZ C0
TSC128DCM RN
Package
TO-220
TO-263
Packing
50pcs / Tube
800pcs / 13” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage @ V
BE
=0V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Power Total Dissipation @ Tc=25ºC
Maximum Operating Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
DTOT
T
J
T
STG
Limit
700
700
400
9
4
8
2
4
35
+150
-55 to +150
Unit
V
V
V
V
A
A
A
A
W
o
o
C
C
1/6
Version: B11

TSC128D_11 Related Products

TSC128D_11 TSC128DCMRN TSC128DCZC0
Description High Voltage NPN Transistor with Diode High Voltage NPN Transistor with Diode High Voltage NPN Transistor with Diode
Maker - Taiwan Semiconductor Taiwan Semiconductor
package instruction - ROHS COMPLIANT, TO-263, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN
Reach Compliance Code - compliant compli
Maximum collector current (IC) - 4 A 4 A
Collector-emitter maximum voltage - 400 V 400 V
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE) - 12 12
JEDEC-95 code - TO-263AA TO-220AB
JESD-30 code - R-PSSO-G3 R-PSFM-T3
Number of components - 1 1
Number of terminals - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE FLANGE MOUNT
Polarity/channel type - NPN NPN
Certification status - Not Qualified Not Qualified
surface mount - YES NO
Terminal form - GULL WING THROUGH-HOLE
Terminal location - SINGLE SINGLE
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1087  855  1397  296  890  22  18  29  6  13 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号