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TSC742A

Description
High Voltage NPN Transistor
File Size402KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSC742A Overview

High Voltage NPN Transistor

TSC742A
High Voltage NPN Transistor
TO-220
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
400V
950V
4A
1.5V @ I
C
=35A, I
B
=0.1A
Features
High Voltage Capability
High Switching Speed
Block Diagram
Structure
Silicon Triple Diffused Type
NPN Silicon Transistor
Ordering Information
Part No.
TSC742ACZ C0
Package
TO-220
Packing
50pcs / Tube
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage @ V
BE
=0V
Emitter-Base Voltage
Collector Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Power Total Dissipation @ Tc=25ºC
Maximum Operating Junction Temperature
Storage Temperature Range
Note:
Single Pulse. P
W
= 300uS, Duty
≤2%
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
DTOT
T
J
T
STG
Limit
950V
400V
15
4
8
2
4
70
+150
-55 to +150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
JC
JA
Limit
1.8
62.5
Unit
o
o
C/W
C/W
1/6
Version: A11

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