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BZT52C9V1K

Description
200mW,Surface Mount Zener Diode
CategoryDiscrete semiconductor    diode   
File Size181KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

BZT52C9V1K Overview

200mW,Surface Mount Zener Diode

BZT52C9V1K Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PDSO-F2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Nominal reference voltage9.1 V
surface mountYES
technologyZENER
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formFLAT
Terminal locationDUAL
Maximum voltage tolerance2%
Working test current5 mA
BZT52C2V0K~BZT52C75K
200mW,Surface Mount Zener Diode
Small Signal Diode
SOD-523F
B
Features
Wide zener voltage range selection : 2.0V to 75V
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version,RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
A
D
E
F
Unit (mm)
Min
0.70
1.50
0.25
1.10
0.60
0.10
Max
0.90
1.70
0.40
1.30
0.70
0.14
Unit (inch)
Min
Max
0.028 0.035
0.059 0.067
0.010 0.016
0.043 0.051
0.024 0.028
0.004 0.006
Mechanical Data
Case :SOD-523F small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed:260°C/10s
Polarity : Indicated by cathode band
Weight :1.68±0.5 mg
Dimensions
A
B
C
D
E
F
Ordering Information
Part No.
Package code Package
Packing
BZT52C2V0K~75K
RK
SOD-523F 3K / 7" Reel
BZT52C2V0K~75K
RKG
SOD-523F 3K / 7" Reel
Pin Configutation
Suggested PAD Layout
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
I
F
=10mA
(Note 1)
Symbol
P
D
V
F
RθJA
T
J
, T
STG
Value
200
1
625
-65 to + 150
Units
mW
V
°C/W
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
Current
I
F
V
ZM
V
Z
V
BR
V
R
I
R
I
ZK
V
F
Voltage
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
Forward Region
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
I
ZT
I
ZM
BreakdownRegion
Leakage Region
I
ZM
V
ZM
Version : B11
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