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GPA801

Description
8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size111KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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GPA801 Overview

8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC

MCC
Micro Commercial Components
TM
  omponents
20736
Marilla
Street Chatsworth

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$ %    !"#
GPA801
thru
GPA807
8 Amp
Glass Passivated
Rectifier
TO-220AC
B
C
K
PIN
1
2
Features
Voltage Drop
Low Forward
High Current Capability
High Reliability
High Surge Current Capability
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Maximum Ratings
Operating Temperature: -65 C to +150 C
Storage Temperature: -65 C to +150 C
Maximum Thermal Resistance; 2.5 C/W Junction To Case
MCC
Part
Number
GPA801
GPA802
GPA803
GPA804
GPA805
GPA806
GPA807
Device
Marking
GPA801
GPA802
GPA803
GPA804
GPA805
GPA806
GPA807
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
L
M
D
A
F
G
I
H
J
N
PIN 1
Electrical Characteristics @ 25 C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous Forward
Voltage
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
8A
150A
T
C
= 100 C
8.3ms, half sine


A
B
C
D
F
G
H
I
J
K
L
M
N
PIN 2
CASE

MM

14.22
9.65
2.54
5.84
------
12.70
4.83
0.51
0.30
3.53
3.56
1.14
2.03


15.88
10.67
3.43
6.86
6.35
14.73
5.33
1.14
0.64
4.09
4.83
1.40
2.92
 
V
F
1.1V
I
F
= 8A;
T
J
= 25 C
I
R
5uA
T
c
= 25 C
C
J
50pF
Measured at
1.0MHz, V
R
=4.0V
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
INCHES



.560
.625
.380
.420
.100
.135
.230
.270
------
.250
.500
.580
.190
.210
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
www.mccsemi.com
Revision:
2
1 of 3
2008/01/01

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