TT8K1 datasheet, PDF - EEWORLD Datasheet

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TT8K1: Description1.5V Drive Nch MOSFET; File Size322KB，6 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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TT8K1 Overview

1.5V Drive Nch MOSFET

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1.５V Drive Nch MOSFET

TT8K1



Structure

Silicon N-channel MOSFET



Dimensions

(Unit : mm)

TSST8

(8)

(7)

(6)

(5)

Features

1) Low On-resistance.

2) High power package.

3) 1.5V drive.

(1)

(2)

(3)

(4)

Abbreviated symbol : K01



Application

Switching



Packaging specifications

Type

TT8K1

Package

Code

Basic ordering unit (pieces)

Taping

3000





Inner circuit

(8)

(7)

(6)

(5)



Absolute maximum ratings

(Ta = 25C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Source current

(Body Diode)

Power dissipation

Channel temperature

Range of storage temperature

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗2

∗1

(1)

(2)

(3)

∗1

(4)

∗1

ESD PROTECTION DIODE

∗2

BODY DIODE

Symbol

DSS

GSS

Limits

10

2.5

Unit

W / TOTAL

W / ELEMENT

C

Continuous

Pulsed

Continuous

Pulsed

Tch

Tstg

10

0.8

1.25

1.0

150

55

to +150



Thermal resistance

Parameter

Channel to Ambient

*Mounted on a ceramic board.

Symbol

Rth (ch-a)

Limits

100

125

Unit

°C

/ W /TOTAL

°C

/ W /ELEMENT

www.rohm.com

1/5

2010.07 - Rev.A

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