C350B datasheet, PDF - EEWORLD Datasheet

C350B: DescriptionSilicon Controlled Rectifier, 112000mA I(T), 200V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size110KB，1 Pages; ManufacturerNational Electronics Inc

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C350B Overview

Silicon Controlled Rectifier, 112000mA I(T), 200V V(DRM)

Parameter Name	Attribute value
Maker	National Electronics Inc
package instruction	,
Reach Compliance Code	unknown
Nominal circuit commutation break time	100 µs
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	500 mA
Maximum leakage current	8 mA
On-state non-repetitive peak current	1800 A
Maximum on-state voltage	2.6 V
Maximum on-state current	112000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-45 °C
Off-state repetitive peak voltage	200 V
surface mount	NO
Trigger device type	SCR

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