4V Drive Pch MOSFET
RT1E040RP
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
(1)
(2)
(3)
(4)
Abbreviated symbol : UG
Application
Switching
Inner curcuit
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RT1E040RP
Taping
TR
3000
○
(8)
(7)
(6)
(5)
∗2
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Drain
Drain
Drain
Gate
Source
Drain
Drain
Drain
∗1
(1)
(2)
(3)
(4)
Symbol
V
DSS
V
GSS
Limits
30
20
4
Unit
V
V
A
A
A
A
W
C
C
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
*1
16
1
16
1.25
150
55
to +150
*1
*2
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth
(ch-a)
*
Limits
100
Unit
C
/ W
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.06 - Rev.A
RT1E040RP
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Symbol
I
GSS
I
DSS
V
GS (th)
R
DS (on)
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
*
Min.
-
30
-
1.0
-
-
-
2.7
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
32
45
52
-
1000
150
130
15
30
85
45
10.5
3.0
3.3
Max.
10
-
1
2.5
45
63
72
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Unit
A
V
A
V
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=4A, V
GS
=10V
m I
D
=2A, V
GS
=4.5V
I
D
=2A, V
GS
=4.0V
I
D
=4A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=2A, V
DD
15V
V
GS
=10V
R
L
=7.5
R
G
=10
I
D
=4A, V
DD
15V
V
GS
=5V R
L
=3.8
R
G
=10
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=4A, V
GS
=0V
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©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.06 - Rev.A
RT1E040RP
Electrical characteristics curves
4
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -2.8V
2
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
4
DRAIN CURRENT : -I
D
[A]
Ta=25°C
V
GS
= -2.8V Pulsed
3
V
GS
= -10V
V
GS
= -4.5V
V
GS
=-4.0V
V
GS
=-3.0V
100
10
V
DS
= -10V
Pulsed
Data Sheet
DRAIN CURRENT : -I
D
[A]
3
2
Ta= 125°C
Ta= 75°C
1 Ta= 25°C
Ta= - 25°C
0.1
0.01
0.001
1
V
GS
= -2.5V
1
V
GS
= -2.5V
0
0
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
0
1
2
3
4
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical Output Characteristics(
Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical Output Characteristics(
Ⅱ)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
Ta=25°C
Pulsed
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -10V
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
1000
1000
V
GS
= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
V
GS
= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
100
100
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ)
10
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ)
10
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ)
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
V
GS
= -4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
DS
= -10V
Pulsed
SOURCE CURRENT : -I
s
[A]
1000
10
10
V
GS
=0V
Pulsed
1
100
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
0.5
1
1.5
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ)
10
0.1
0.01
0.1
1
10
0.01
DRAIN-CURRENT : -I
D
[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
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©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.06 - Rev.A
RT1E040RP
Data Sheet
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
150
I
D
= -2.0A
100
1000
t
d(off)
t
f
GATE-SOURCE VOLTAGE : -V
GS
[V]
SWITCHING TIME : t [ns]
Ta=25°C
Pulsed
10000
I
D
= -4.0A
Ta=25°C
V
DD
= -15V
V
GS
= -10V
R
G
=10Ω
Pulsed
8
6
100
t
d(on)
10
t
r
4
50
2
Ta=25°C
V
DD
= -15V
I
D
= -4.0A
R
G
=10Ω
Pulsed
0
5
10
15
0
0
5
10
15
1
0.01
0.1
1
10
0
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -I
D
[A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
CAPACITANCE : C [pF]
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
1000
100
Crss
Coss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.06 - Rev.A
RT1E040RP
Measurement circuits
Pulse Width
Data Sheet
V
GS
I
D
R
L
D.U.T.
V
DS
V
GS
10%
50%
10%
90%
50%
10%
90%
R
G
V
DD
V
DS
t
d(on)
t
on
90%
t
r
t
d(off)
t
off
t
f
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
V
GS
I
D
R
L
I
G(Const.)
D.U.T.
R
G
V
DD
V
DS
Q
g
V
GS
Q
gs
Q
gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.06 - Rev.A
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