IRFC448 datasheet, PDF - EEWORLD Datasheet

IRFC448: DescriptionPower Field-Effect Transistor, 14.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size87KB，1 Pages; ManufacturerSilicon Transistor Corp.oration

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IRFC448 Overview

Power Field-Effect Transistor, 14.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	Silicon Transistor Corp.oration
package instruction	UNCASED CHIP, X-XUUC-N
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	14.5 A
Maximum drain-source on-resistance	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	X-XUUC-N
Number of components	1
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Transistor component materials	SILICON

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