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2SB1184-Q

Description
PNP Silicon Epitaxial Transistors
File Size584KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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2SB1184-Q Overview

PNP Silicon Epitaxial Transistors

MCC
Micro Commercial Components
2SB1184-P
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SB1184-Q
2SB1184-R
PNP Silicon
Epitaxial Transistors
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Low Collector Saturation Voltage
Execllent current-to-gain characteristics
o
Maximum Thermal Resistance:
125
C/W Junction to
Ambient
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
-50
-60
-5.0
-3.0
1.0
150
-55 to +150
Unit
V
V
V
A
W
Maximum Ratings
C
DPAK
J
H
1
O
2
I
3
M
K
V
F
E
Electrical Characteristics @ 25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
f
T
C
ob
Unless Otherwise Specified
Min
-60
-50
-5
---
---
82
---
Typ
---
---
---
---
---
---
---
70
---
50
Max
---
---
---
-1.0
-1.0
390
-1.0
---
---
Units
Vdc
Vdc
Vdc
uAdc
A
Q
G
Parameter
Collector-base Breakdown Voltage
(I
C
=-50uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=-1mAdc, I
B
=0)
Emitter-base Breakdown Voltage
(I
E
=-50uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CB
=-40Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=-4Vdc, I
C
=0)
DC Current Gain
(I
C
=-0.5Adc, V
CE
=-3.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-2Adc, I
B
=-200mAdc)
Transition Frequency
(V
CE
=-5Vdc, I
C
=-500mAdc,f=30MHz)
Collector output capacitance
(V
CB
=-10Vdc,
I
E
=0,f=1.0MHz)
uAdc
L
---
Vdc
MHz
pF
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Q
V
B
PIN 1.
PIN 2.
PIN 3.
DIMENSIONS
D
BASE
COLLECTOR
EMITTER
CLASSIFICATION OF H
FE (1)
Rank
Range
P
82-180
Q
120-270
R
180-390
INCHES
MIN
MAX
0.087
0.094
0.000
0.005

0.026
0.034
0.018
0.023
0.256
0.264
0.201
0.215
0.190
0.236
0.244
0.086
0.094
0.386
0.409
0.114
0.055
0.067
0.063
0.043
0.051
0.000
0.012
0.211
MM
MIN
2.20
0.00
0.66
0.46
6.50
5.10
4.83
6.00
2.18
9.80
6.20
2.39
10.40
MAX
2.40
0.13
0.86
0.58
6.70
5.46
NOTE
2.90
1.40
1.60
1.10
0.00
1.30
0.30
1.70
5.35
www.mccsemi.com
Revision: A
1 of
4
2011/01/01

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Description PNP Silicon Epitaxial Transistors PNP Silicon Epitaxial Transistors PNP Silicon Epitaxial Transistors

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