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UT8SDMQ64M40-75YEC

Description
Synchronous DRAM, 64MX40, 5.4ns, CMOS, CQFP128, QFP-128
Categorystorage    storage   
File Size1MB,69 Pages
ManufacturerCobham PLC
Download Datasheet Parametric View All

UT8SDMQ64M40-75YEC Overview

Synchronous DRAM, 64MX40, 5.4ns, CMOS, CQFP128, QFP-128

UT8SDMQ64M40-75YEC Parametric

Parameter NameAttribute value
MakerCobham PLC
package instructionQFP-128
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO REFRESH
JESD-30 codeR-CQFP-F128
length27.81 mm
memory density2684354560 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width40
Number of functions1
Number of ports1
Number of terminals128
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
organize64MX40
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeGQFF
Package shapeRECTANGULAR
Package formFLATPACK, GUARD RING
Maximum seat height5.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Terminal formFLAT
Terminal pitch0.635 mm
Terminal locationQUAD
total dose50k Rad(Si) V
width16.28 mm
Standard Products
UT8SDMQ64M40 2.5-Gigabit SDRAM MCM
UT8SDMQ64M48 3.0-Gigabit SDRAM MCM
Datasheet
April, 2014
www.aeroflex.com/memories
FEATURES
Organized as 64M x 40 (16Meg x 40 x 4 banks) and 64M
x 48 (16Meg x 48 x 4 banks)
Single 3.3V power supply
Maximum frequency: 100 MHz
Operation -40
o
C to +105
o
C
LVTTL compatible with multiplexed address
Fully synchronous; all signals registered on positive edge
of system clock
Internal pipelined operation; column address can be
changed every clock cycle
Programmable burst lengths: 1,2,4,8, or full page
Auto-precharge, includes concurrent auto precharge, and
auto-refresh mode
32ms, 8,192-cycle refresh
Operational environment:
- Total dose: 100 krad(Si)
- SEL Immune 111 MeV-cm
2
/mg
- SEU Event Rate: 1.3E-10 events/bit-day assuming
geosynchronous orbit and Adam’s 90% worst-case
environment
Package options:
- 128-lead Ceramic Quad Flatpack, shallow side-braze
- 128-lead Ceramic Quad Flatpack, deep side-braze
Standard Microcircuit Drawing
- UT8SDMQ64M40: 5962-10229
- UT8SDMQ64M48: 5962-10230
- QML Q and Q+
INTRODUCTION
The UT8SDMQ64M40 and UT8SDMQ64M48 are high
performance, highly integrated Synchronous Dynamic Random
Access Memory (SDRAM) multi-chip modules (MCMs). Total
module density is 2,684,354,560 bits for the 2.5G device and
3,221,225,472 bits for the 3G device. Each bit bank is organized
as 8192 rows by 2048 columns.
Read and write accesses to the DRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed sequence.
The programmable READ and WRITE burst lengths (BL) are
1, 2, 4, or 8 locations, or the full page, with a burst terminate
option.
Aeroflex’s SDRAMs are designed to operate at 3.3V. An auto-
refresh mode is provided, along with a power-saving, power-
down mode. All inputs and outputs are LVTTL compatible.
SDRAMs offer significant advances in DRAM operating
execution, including the capability to synchronously burst data
at a high data rate with automatic column-address generation,
to interleave between internal banks to mask precharging time,
and to randomly change column addresses on each clock cycle
during a burst access.
40
DQM5
48
U5
U4
U3
U2
8
8
8
DQM4
DQM3
DQM2
DQM1
DQM0
A[12:0]
BA[1:0]
CLK
CKE
RAS#
CAS#
WE#
CS#
15
U4
U3
U2
U1
8
8
DQM4
8
DQ[7:0](5)
DQ[7:0](4)
DQ[7:0](3)
8
DQ[47:40]
DQ[39:32]
DQ[31:24]
DQ[23:16]
DQ[15:8]
DQ[7:0]
DQ[7:0](4)
DQ[7:0](3)
8
DQ[39:32]
DQ[31:24]
DQ[23:16]
DQ[15:8]
DQ[7:0]
DQM3
DQM2
DQM1
DQM0
A[12:0]
BA[1:0]
CLK
CKE
RAS#
CAS#
WE#
CS#
15
DQ[7:0](2)
DQ[7:0](1)
8
U1
U0
SDRAM
16Meg x 8 x4
8
DQ[7:0](2)
8
DQ[7:0](1)
DQ[7:0](0)
U0
SDRAM
16Meg x 8 x4
DQ[7:0](0)
2.5Gigabit (64Mx40)
3.0Gigabit (64Mx48)
Figure 1. Block Diagrams
1
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