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2N6107AU

Description
7A, 70V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size98KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

2N6107AU Overview

7A, 70V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6107AU Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1918478740
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL0
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-emitter maximum voltage70 V
ConfigurationSINGLE
Minimum DC current gain (hFE)2.3
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
2N6107, 2N6109, 2N6111 (PNP),
2N6288, 2N6292 (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
http://onsemi.com
High DC Current Gain
High Current Gain − Bandwidth Product
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
30 − 50 − 70 VOLTS, 40 WATTS
PNP
NPN
COLLECTOR 2, 4
MAXIMUM RATINGS
(Note 1)
Rating
Collector−Emitter Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
Collector−Base Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
30
50
70
V
CB
40
60
80
V
EB
I
C
I
CM
I
B
P
D
40
0.32
T
J
, T
stg
−65 to +150
W
W/°C
°C
5.0
7.0
10
3.0
Vdc
Adc
Adc
Adc
Vdc
Value
Unit
Vdc
1
BASE
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
EMITTER 3
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.125
Unit
_C/W
2N6xxxG
AYWW
2N6xxx
xxx
G
A
Y
WW
= Specific Device Code
= See Table on Page 4
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
1
September, 2013 − Rev. 10
Publication Order Number:
2N6107/D

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