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APM3004NUC-TRL

Description
Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size206KB,11 Pages
ManufacturerAmerican Power Devices Inc.
Environmental Compliance  
Download Datasheet Parametric Compare View All

APM3004NUC-TRL Overview

Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3

APM3004NUC-TRL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerAmerican Power Devices Inc.
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)300 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.004 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
APM3004NU
N-Channel Enhancement Mode MOSFET
Features
30V/75A,
R
DS(ON)
=3.3mΩ (typ.) @ V
GS
=10V
R
DS(ON)
=4.5mΩ (typ.) @ V
GS
=4.5V
Pin Description
G
D
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
S
Top View of TO-252
D
Applications
G
Power Management in Desktop Computer or
DC/DC Converters
S
N-Channel MOSFET
Ordering and Marking Information
APM3004N
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device
APM3004N U :
APM3004N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2007
1
www.anpec.com.tw

APM3004NUC-TRL Related Products

APM3004NUC-TRL APM3004NUC-TUL
Description Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker American Power Devices Inc. American Power Devices Inc.
Parts packaging code TO-252 TO-252
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 4
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 300 mJ 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 75 A 75 A
Maximum drain-source on-resistance 0.004 Ω 0.004 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 TO-252
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 200 A 200 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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