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1.5KE480A

Description
408V,1500W, TVS, Diodes, 10×1000us, 1500W, 408V, 456V, 504V, 5uA
CategoryDiscrete semiconductor   
File Size347KB,4 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric View All

1.5KE480A Overview

408V,1500W, TVS, Diodes, 10×1000us, 1500W, 408V, 456V, 504V, 5uA

1.5KE480A Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
Parts packaging codeDO-27S
Reach Compliance Codeunknown
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
category
Condition10×1000us
PPK (W)1500
VRWM (V) max.408
VBR (V) min.456
VBR (V) max.504
IR (uA) max.5
VC (V) max.658
Condition1_IPP (A)2.28
AEC QualifiedNO
Maximum operating temperature150
Minimum operating temperature-55
Is it lead-free?no
Comply with ReachYES
RoHS compliantYES
Package OutlinesDO-27S
BL
FEATURES
GALAXY ELECTRICAL
1.5KE6.8 - -
-
1.5KE550CA
BREAKDOWN VOLTAGE: 6.8 ---
550
V
PEAK PULSE POWER: 1500 W
TRANSIENT VOLTAGE SUPPRESSOR
Plastic package
has
underwriters laboratory
flammability classification
94V-0
Glass passivated junction
1500W peak pulse power capability with a 10/1000μs
waveform, repetition rate (duty cycle): 0.01%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bi-directional types
For devices with V
(BR)
10V,I
D
are typically less than
5.0μA
/ 10 seconds,
High temperature soldering guaranteed:265
DO-27S
0.375"(9.5mm) lead length, 5Ibs. (2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-27S, molded plastic
Polarity:
color
band denotes positive end
( cathode ) except for bidirectional
Weight:
0.032 ounces, 0.9 grams
Mounting position:
any
Dimensions in millimeters
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA suffix for types 1.5KE 6.8 thru types 1.5KE
550
(e.g.
1.5KE
6.8CA,
1.5KE
550CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Peak
pow
er
dissipation
w ith a 10/1000μs w aveform (NOTE 1, FIG.1)
Peak
pulse current
w ith a 10/1000μs w aveform (NOTE 1)
Steady
state pow
er
dissipation
at T
L
=75
fffffLead
lengths
0.375"(9.5mm) (NOTE 2)
Peak
forw
ard
surge current,
8.3ms
single
half
ffffSine-wave
superimposed
on
rated load
(JEDEC Method) (NOTE 3)
Maximum
instantaneous
forw
ard
voltage
at
100.0A
for unidirectional only (NOTE 4)
Operating
junction
and
storage temperature range
VALUE
Minimum 1500
SEE TABLE 1
6
.5
UNIT
W
A
W
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
200.0
3.5/5.0
-50---+150
A
V
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T
A
=25 per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm
2
) per Fig. 5
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5 Volt max. for devices of V
(BR)
200V, and V
F
=5.0 Volt max. for devices of V
(BR)
>200V
www.galaxycn.com
Document Number
1685003C
BL
GALAXY ELECTRICAL
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