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2SD1898I

Description
80V,1A,Medium Power NPN Bipolar Transistor, Diodes, NPN, 80V, 1A, 82, 390, 3V
CategoryDiscrete semiconductor   
File Size190KB,5 Pages
ManufacturerGalaxy Microelectronics
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2SD1898I Overview

80V,1A,Medium Power NPN Bipolar Transistor, Diodes, NPN, 80V, 1A, 82, 390, 3V

2SD1898I Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
package instruction,
Reach Compliance Codeunknown
category
polarityNPN
V(BR)CEO (V) min.80
IC (A)1
hFE min82
hFE max390
Condition1_VCE (V)3
Condition1_IC (mA)500
VCE (sat) (V)0.4
Condition2_IC (mA)500
Condition2_IB (mA)20
fT (MHz) min.100(typ)
PD (W) max.1
AEC QualifiedNo
Maximum operating temperature150
Minimum operating temperature-55
MSL level3
Is it lead-free?Yes
Comply with ReachYes
RoHS compliantYes
ECCN codeEAR99
Package OutlinesTO-251
Product specification
Power Transistor(80V,1A)
FEATURES
High V
CEO
,V
CEO
=80V.
High I
C
,I
C
=1A(DC)
.
Good H
FE
Linearity.
Low V
CE(sat).
Complement the 2SB1260.
2SD1898
Pb
Lead-free
APPLICATIONS
NPN silicon transistor.
2SD1898I
TO-251
2SD1898D
TO-252
Ordering Information
Part Number
Package
Shipping
Marking Code
2SD1898I□
2SD1898D□
□:
none is for Lead Free package;
TO-251
TO-252
80/Tube
80/Tube or2500/Tape Reel
D1898I
D1898D
“G” is for Halogen Free package.
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
Parameter
Collector-Base Voltage
Value
Units
V
CBO
120
V
V
CEO
Collector-Emitter Voltage
80
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current -Continuous
1
A
I
CM
Collector Current -pulse
2
1.0
1.3
Note1
A
W
W
P
C
Collector Dissipation
T
j,
T
stg
Junction and Storage Temperature
-55 to +150
Note1:Mounted on ceramic substrate(250mm
2
*0.8t)
STM0256A
www.gmesemi.com
1

2SD1898I Related Products

2SD1898I 2SD1898D
Description 80V,1A,Medium Power NPN Bipolar Transistor, Diodes, NPN, 80V, 1A, 82, 390, 3V 80V,1A,Medium Power NPN Bipolar Transistor, Diodes, NPN, 80V, 1A, 82, 390, 3V
Maker Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown
polarity NPN NPN
V(BR)CEO (V) min. 80 80
IC (A) 1 1
hFE min 82 82
hFE max 390 390
Condition1_VCE (V) 3 3
Condition1_IC (mA) 500 500
VCE (sat) (V) 0.4 0.4
Condition2_IC (mA) 500 500
Condition2_IB (mA) 20 20
fT (MHz) min. 100(typ) 100(typ)
PD (W) max. 1 1
AEC Qualified No No
Maximum operating temperature 150 150
Minimum operating temperature -55 -55
MSL level 3 3
Is it lead-free? Yes Yes
Comply with Reach Yes Yes
RoHS compliant Yes Yes
ECCN code EAR99 EAR99
Package Outlines TO-251 TO-252
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