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DL4750A

Description
27V,1000mW,Zener Diodes, Diodes, Single, 0.05, 27V, 9.5mA, 1000mW, Yes
CategoryDiscrete semiconductor   
File Size112KB,3 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric View All

DL4750A Overview

27V,1000mW,Zener Diodes, Diodes, Single, 0.05, 27V, 9.5mA, 1000mW, Yes

DL4750A Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance35 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation1 W
Nominal reference voltage27 V
surface mountYES
Maximum voltage tolerance5%
Working test current9.5 mA
category
Tolerance0.05
VZ (V) nom.27
Condition1_IT (mA)9.5
PD (mW) max1000
AEC QualifiedYes
Maximum operating temperature175
Minimum operating temperature-55
Is it lead-free?Yes
Comply with ReachYes
RoHS compliantYes
ECCN codeEAR99
PinZ1
Package OutlinesMELF
BL
FEATURES
power rating.
GALAXY ELECTRICAL
ZENER DIODES
DL4728 - - - DL4764
POWER DISSIPATION: 1.0 W
Silicon planar power zener diodes
For use in stabilizing and clipping circuits with high
MELF
Standard zener voltage tolerance is ±10%. Add
suffix "A" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
MECHANICAL DATA
Case:MELF, glass case
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode band
Marking: type number
Approx. weight: 0.25 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see Table "Characteristics")
VALUE
UNIT
Pow er dissipation @ T
amb
50
P
Diss
I
Z
T
J
T
s
R
ThJA
1.0
1)
P
V
/V
Z
175
1)
W
Z-current
mA
Junction temperature
Storage temperature range
-55---+175
170
Junction ambient I=9.5mm(3/8 ), T
L
=constant
K/W
SYMBOL
Forw ard voltage at I
F
=200mA
MIN
TYP
MAX
1.2
UNIT
V
V
F
1)Valid provided that electrodes re kept at ambient temperature.
www.galaxycn.com
Document Number 0284021
BL
GALAXY ELECTRICAL
1.

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