Product specification
GENERAL PURPOSE TRANSISTORS NPN Silicon
FEATURES
Low Collector-Emitter Saturation Voltage V
CE(sat)
。
High Collector Current Capability.
High Collector Current Gain.
Improved Efficiency Due to Reduced Heat Generation.
GT4350
Pb
Lead-free
SOT-23
ORDERING INFORMATION
Type No.
GT4350
□
□:
none is for Lead Free package;
“G” is for Halogen Free package.
Marking
43yww
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
(Note 1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
CE(sat)
R
θ
JA
R
θ
JC
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Equivalent On-Resistance
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Junction Temperature
Storage Temperature Range
Value
50
50
5
2
300
130
417
250
150
- 65 ~ +150
Units
V
V
V
A
mW
mΩ
°C/W
°C/W
℃
℃
Note:1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
STM0205A
www.gmesemi.com
1
Product specification
GENERAL PURPOSE TRANSISTORS NPN Silicon
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test conditions
I
C
=10μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=50V,I
E
=0
TJ=25℃
TJ=150℃
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=100mA
V
CE
=2V,I
C
=500mA
DC current gain
h
FE
V
CE
=2V,I
C
=1A
V
CE
=2V,I
C
=2A
V
CE
=2V,I
C
=3A
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=50mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=200mA
I
C
=3A, I
B
=300mA
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Collector Capacitance
GT4350
MIN
50
50
5
-
-
TYP
MAX
UNIT
V
V
V
-
-
100
50
100
nA
μA
nA
300
300
300
200
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
-
-
-
-
80
160
280
260
370
130
1.1
1.2
1.2
25
-
mΩ
V
V
pF
MHz
mV
-
R
CE(sat)
V
BE(sat)
V
BE(on)
C
C
f
T
I
C
=2A, I
B
=200mA
I
C
=2A, I
B
=100mA
I
C
=3A, I
B
=300mA
V
CE
=2V, I
C
=1A
V
CB
=10V, I
E
=I
e
=0,f=1MHz
V
CE
=5V, I
C
=100mA,
f=100MHz
-
-
-
-
100
-
-
-
-
-
Transition Frequency
STM0205A
www.gmesemi.com
2
京公网安备 11010802033920号
EEWORLD
