CMOS LDO Regulators for Portable Equipments
1ch 150mA
CMOS LDO Regulators
BH□□NB1WHFV series
No.11020EBT04
●Description
The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple
rejection ratio of 80 dB (Typ., 1 kHz). They are ideal for use in high-performance, analog applications and offer improved line
regulation, load regulation, and noise characteristics. Using the ultra-small HVSOF5 package, which features a built-in heat
sink, contributes to space-saving application designs.
●Features
1) High accuracy output voltage: ± 1%
2) High ripple rejection ratio: 80 dB (Typ., 1 kHz)
3) Stable with ceramic capacitors
4) Low bias current: 60 µA
5) Output voltage on/off control
6) Built-in overcurrent and thermal shutdown circuits
7) Ultra-small HVSOF5 power package
●Applications
Battery-driven portable devices, etc.
●Product
line
150
mA BH□□NB1WHFV Series
Product name
BH□□NB1WHFV
2.5
2.8
2.85
2.9
3.0
3.1
3.3
Package
HVSOF5
√
√
√
√
√
√
√
Model name: BH□□NB1W□
a
b
Symbol
Description
Output voltage specification
□□
25
a
28
2J
29
b
2.8 V (Typ.)
2.85 V (Typ.)
2.9 V (Typ.)
Package HFV: HVSOF5
31
33
3.1 V (Typ.)
3.3 V (Typ.)
Output voltage (V)
2.5 V (Typ.)
□□
30
Output voltage (V)
3.0 V (Typ.)
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© 2011 ROHM Co., Ltd. All rights reserved.
1/8
2011.01 - Rev.B
BH□□NB1WHFV series
●Absolute
maximum ratings
Parameter
Applied power supply voltage
Power dissipation
Operating temperature range
Storage temperature range
Symbol
VMAX
Pd
Topr
Tstg
Ratings
−0.3
to +6.0
410
*1
−40
to +85
−55
to +125
Unit
V
mW
°C
°C
Technical Note
*1: Reduce by 4.1 mW/C over 25C, when mounted on a glass epoxy PCB (70 mm
70 mm
1.6 mm).
●Recommended
operating ranges (not to exceed Pd)
Parameter
Power supply voltage
Output current
●Recommended
operating conditions
Parameter
Input capacitor
Output capacitor
*2
Symbol
V
IN
I
OUT
Ratings
2.5 to 5.5
0 to 150
Unit
V
mA
Symbol
C
IN
C
O
Ratings
Min.
0.1
*2
2.2
*2
Typ.
—
—
Max.
—
—
Unit
µF
µF
Conditions
The use of ceramic
capacitors is recommended.
The use of ceramic
capacitors is recommended.
Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic.
And also make sure that the capacitor value cannot change as time progresses.
●Electrical
characteristics
(Unless otherwise specified, Ta = 25°C, V
IN
= V
OUT
+ 1.0 V, STBY = 1.5 V, C
IN
= 0.1 µF, C
O
= 2.2 µF)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
Output voltage
Circuit current
Circuit current (STBY)
Ripple rejection ratio
Load response 1
Load response 2
Dropout voltage 1
Dropout voltage 2
Line regulation
Load regulation 1
Load regulation 2
Overcurrent protection
limit current
Short current
STBY pull-down resistance
STBY control voltage
ON
OFF
V
OUT
IGND
ISTBY
RR
LTV1
LTV2
VSAT1
VSAT2
VDL1
VDLO1
VDLO2
ILMAX
ISHORT
RSTB
VSTBH
VSTBL
V
OUT
0.99
—
—
—
—
—
—
—
—
—
—
—
—
275
1.5
−0.3
V
OUT
60
—
80
25
25
80
250
1
6
9
250
50
550
—
—
V
OUT
1.01
100
1.0
—
—
—
150
450
20
30
90
—
—
1100
V
IN
0.3
V
µA
µA
dB
mV
mV
mV
mV
mV
mV
mV
mA
mA
kΩ
V
V
I
OUT
= 1 mA
I
OUT
= 50 mA
STBY = 0 V
VRR =
−20
dBv, fRR = 1 kz,
I
OUT
= 10 mA
I
OUT
= 1 mA to 30 mA
I
OUT
= 30 mA to 1 mA
V
IN
= 0.98
V
OUT
,
I
OUT
= 30 mA
V
IN
= 0.98
V
OUT
,
I
OUT
= 100 mA
V
IN
= V
OUT
+ 0.5 V to 5.5 V,
I
OUT
= 50 mA
I
OUT
= 1 mA to 100 mA
I
OUT
= 1 mA to 150 mA
V
O
= V
OUT
0.98
V
O
= 0 V
* This IC is not designed to be radiation-resistant.
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© 2011 ROHM Co., Ltd. All rights reserved.
2/8
2011.01 - Rev.B
BH□□NB1WHFV series
●Reference
data
4.0
3.5
Output Voltage VOUT[V]
Technical Note
4.0
3.5
4.0
3.5
O ut put Volt age VO UT[V]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
Input Volt age VIN[V]
5
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
Input Voltage VIN[V]
5
Out put Voltage VOUT[V]
3.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
Input Voltage VIN[V]
5
Fig.1 Output Voltage vs Input Voltage
(BH25NB1WHFV)
80
70
Fig.2 Output Voltage vs Input Voltage
(BH30NB1WHFV)
80
70
GND Current IGND[mA]
60
50
40
30
20
10
0
Fig.3 Output Voltage vs Input Voltage
(BH33NB1WHFV)
80
70
GND Current IGND[mA]
60
50
40
30
20
10
0
GND Current IGND[mA]
60
50
40
30
20
10
0
0
1
2
3
4
Input Voltage VIN[V]
5
0
1
2
3
4
Input Voltage VI N[V]
5
0
1
2
3
4
Input Voltage VIN[V]
5
Fig.4 GND Current vs Input Voltage
(BH25NB1WHFV)
3.5
3.0
Output Voltage VOUT[V]
Fig.5 GND Current vs Input Voltage
(BH30NB1WHFV)
3.5
3.0
Output Voltage VOUT[V]
Fig.6 GND Current vs Input Voltage
(BH33NB1WHFV)
3.5
3.0
Output Voltage VOUT[V]
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
0
50
100 150 200 250
O ut put Current IOUT[mA]
300
2.5
2.0
1.5
1.0
0.5
0.0
0
50
100 150 200 250
Output Current IO UT [mA]
300
0
50
100 150 200 250
Output Current IO UT [mA]
300
Fig.7 Output Voltage vs Output Current
(BH25NB1WHFV)
0. 5
Fig.8 Output Voltage vs Output Current
(BH30NB1WHFV)
0.5
Fig.9 Output Voltage vs Output Current
(BH33NB1WHFV)
0.5
VSAT[V]
Dropout Voltage VSAT[V]
0. 3
0.3
0. 2
Dropout Voltage
0.2
0. 1
0.1
0. 0
0
50
100
Output Current I OUT[mA]
150
0.0
0
50
100
Output Current IOUT[mA]
150
Dropout Voltage VSAT[V]
0. 4
0.4
0.4
0.3
0.2
0.1
0.0
0
50
100
O ut put Current IOUT[mA]
150
Fig.10 Dropout voltage vs Output Current
(BH25NB1WHFV)
Fig.11 Dropout voltage vs Output Current Fig.12 Dropout voltage vs Output Current
(BH33NB1WHFV)
(BH30NB1WHFV)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/8
2011.01 - Rev.B
BH□□NB1WHFV series
Technical Note
2.60
3.10
3.40
Output Voltage VOUT[V]
Output Voltage VOUT[V]
Output Voltage VOUT[V]
2.55
3.05
3.35
2.50
3.00
3.30
2.45
2.95
3.25
IOUT=1mA
2.40
-50
-25
0
25
50
Temp[
℃
]
75
100
IOUT=1mA
2.90
-50
-25
0
25
50
Temp[
℃
]
75
100
3.20
-50
-25
0
IOUT=1mA
25
50
Temp[
℃
]
75
100
Fig.13 Output Voltage vs Temperature
(BH25NB1WHFV)
90
80
Ripple Rejection R.R.[dB]
Fig.14 Output Voltage vs Temperature
(BH30NB1WHFV)
90
80
Ripple Rejection R.R.[dB]
70
60
50
40
30
20
Fig.15 Output Voltage vs Temperature
(BH33NB1WHFV)
90
80
Ripple Rejection R.R.[dB]
70
60
50
40
30
20
70
60
50
40
30
20
10
Co=2.2μF
Io=10mA
100
1k
10 k
100
Frequency f[Hz]
1M
Co=2.2μF
Io=10mA
100
1k
10 k
Frequency f[Hz]
Co=2.2μF
Io=10mA
100
1k
10 k
100
Frequency f[Hz]
1M
10
100
1M
10
Fig.16 Ripple Rejection
(BH25NB1WHFV)
Fig.17 Ripple Rejection
(BH30NB1WHFV)
Fig.18 Ripple Rejection
(BH33NB1WHFV)
IOUT = 1 mA
→
30 mA
IOUT = 1 mA
→
30 mA
IOUT = 1 mA
→
30 mA
VOUT
50 mV / div
VOUT
50 mV / div
VOUT
50 mV / div
100 µs / div
100 µs / div
100 µs / div
Fig.19 Load Response
(Co = 2.2 µF)
(BH25NB1WHFV)
Fig.20 Load Response
(Co = 2.2 µF)
(BH30NB1WHFV)
Fig.21 Load Response
(Co = 2.2 µF)
(BH33NB1WHFV)
1 V / div
STBY
STBY
1 V / div
STBY
1 V / div
1 V / div
Co = 1 µF
Co = 10 µF
VOUT
Co = 2.2 µF
100 µs / div
VOUT
Co = 1 µF
1 V / div
Co = 10 µF
Co = 2.2 µF
100 µs / div
Co = 1 µF
1 V / div
Co = 10 µF
VOUT
Co = 2.2 µF
100 µs / div
Fig.22 Output Voltage Rise Time
(BH25NB1WHFV)
Fig.23 Output Voltage Rise Time
(BH30NB1WHFV)
Fig.24 Output Voltage Rise Time
(BH33NB1WHFV)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/8
2011.01 - Rev.B
BH□□NB1WHFV series
●Block
diagram, recommended circuit diagram, and pin assignment diagram
BH□□NB1WHFV
VIN
VIN
Technical Note
3
VOLTAGE
REFERENCE
Pin
No.
4
VOUT
VOUT
Symbol
STBY
GND
V
IN
V
OUT
N.C.
Function
Output voltage on/off control
(High: ON, Low: OFF)
Ground
Power supply input
Voltage output
NO CONNECT
Cin
1
2
3
4
5
GND
2
THERMAL
PROTECTION
OVER CURRENT
PROTECTION
Co
N.C.
VSTB
STBY
1
CONTROL
BLOCK
5
Cin
0.1µF
Co
2.2µF
Fig.25
●Power
dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption,
and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is
exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current
capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is
not exceeded during IC operation.
Calculating the maximum internal IC power consumption (P
MAX
)
P
MAX
= (V
IN
−
V
OUT
)
I
OUT
(MAX.)
V
IN
: Input voltage
V
OUT
: Output voltage
I
OUT
(MAX): Max. output current
2. Power dissipation/power dissipation reduction (Pd)
HVSOF5
0.6
Board: 70 mm
70 mm
1.6 mm
Material: Glass epoxy PCB
0.4
410 mW
Pd[W]
0.2
0
0
25
50
75
100
125
Fig. 26
HVSOF5 Power Dissipation/Power Dissipation Reduction (Example)
Ta[
℃
]
*Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd.
●Input
Output capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted.
Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or
X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages.
Typical ceramic capacitor characteristics
120
100
Capac itance rate of change [% ]
100
Capacitance rate of change [%]
Capacitanc e rate of change [%]
50 V
tolerance
50 V tolerance
120
95
100
80
80
90
85
80
75
X7R
X5R
Y5V
60
40
10 V
tolerance
16 V tolerance
10 V
tolerance
60
40
16 V tolerance
20
20
0
0
0
1
70
DC bias Vdc[V]
2
3
4
0
1
DC bias Vdc[V]
2
3
4
- 25
0
25
Temp[
℃
]
50
75
Fig.27 Capacitance vs Bias
(Y5V)
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© 2011 ROHM Co., Ltd. All rights reserved.
Fig.28 Capacitance vs Bias
(X5R, X7R)
Fig.29 Capacitance vs Temperature
(X5R, X7R, Y5V)
5/8
2011.01 - Rev.B
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