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AR1PD

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-220AA
Categorysemiconductor    Discrete semiconductor   
File Size107KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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AR1PD Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-220AA

AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM
www.vishay.com
Vishay General Semiconductor
Surface Mount Fast Avalanche Rectifiers
eSMP
Series
®
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Fast switching for high efficiency
• Low reverse current
• Meets MSL level 1, per
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
J-STD-020,
Available
SMP
(DO-220AA)
Cathode
Anode
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
I
R
E
AS
T
J
max.
Package
Circuit configuration
1.0 A
200 V, 400 V, 600 V, 800 V, 1000 V
30 A, 25 A
140 ns, 120 ns
1.15 V, 1.4 V
1 μA
20 mJ
175 °C
SMP (DO-220AA)
Single
MECHANICAL DATA
Case:
SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy
at I
AS
= 1.0 A, T
A
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
30
20
-55 to +175
SYMBOL
AR1PD
ARD
200
AR1PG
ARG
400
AR1PJ
ARJ
600
1.0
25
AR1PK
ARK
800
AR1PM
ARM
1000
V
A
A
mJ
°C
UNIT
Revision: 13-Aug-2018
Document Number: 89289
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

AR1PD Related Products

AR1PD AR1PJHM3/85A AR1PDHM3/85A AR1PGHM3/85A AR1PKHM3/85A AR1PMHM3/85A
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-220AA 1 A, 600 V, SILICON, SIGNAL DIODE, DO-220AA DIODE AVALANCHE 200V 1A DO220AA DIODE AVALANCHE 400V 1A DO220AA DIODE AVALANCHE 800V 1A DO220AA DIODE AVALANCHE 1000V 1A DO220AA
Is it Rohs certified? - conform to conform to conform to conform to conform to
Maker - Vishay Vishay Vishay Vishay Vishay
Reach Compliance Code - unknow unknown unknown unknown unknown
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time - 12 weeks 12 weeks 12 weeks 12 weeks 12 weeks
Configuration - SINGLE SINGLE - SINGLE SINGLE
Diode type - RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.15 V 1.15 V - 1.4 V 1.4 V
JESD-609 code - e3 e3 - e3 e3
Humidity sensitivity level - 1 1 - 1 1
Maximum non-repetitive peak forward current - 30 A 30 A - 25 A 25 A
Number of components - 1 1 - 1 1
Maximum operating temperature - 175 °C 175 °C - 175 °C 175 °C
Maximum output current - 1 A 1 A - 1 A 1 A
Peak Reflow Temperature (Celsius) - 260 260 - 260 260
Maximum repetitive peak reverse voltage - 600 V 200 V - 800 V 1000 V
Maximum reverse recovery time - 0.14 µs 0.14 µs - 0.12 µs 0.12 µs
surface mount - YES YES - YES YES
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED

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