A Product Line of
Diodes Incorporated
DMN2300UFB
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
175mΩ @ V
GS
= 4.5V
240mΩ @ V
GS
= 2.5V
360mΩ @ V
GS
= 1.8V
I
D
max
T
A
= 25°C
(Note 4)
1.30A
1.11A
0.91A
Features and Benefits
•
•
•
•
•
•
•
•
•
Footprint of just 0.6mm – thirteen times smaller than SOT23
0.5mm profile – ideal for low profile applications
On resistance <200mΩ @ V
GS
= 4.5V
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2KV
Qualified to AEC-Q101 Standards for High Reliability
2
20V
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
Load switch
Mechanical Data
•
•
•
•
•
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
DFN1006-3
Body
Diode
S
D
G
Gate
ESD PROTECTED TO 2kV
Bottom View
Top View
Internal Schematic
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information
(Note 3)
Part Number
DMN2300UFB-7
DMN2300UFB-7B
Notes:
Marking
NI
NI
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2300UFB-7
DMN2300UFB-7B
NI
Top View
Dot Denotes
Drain Side
NI
Top View
Bar Denotes Gate
and Source Side
1 of 6
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NI = Product Type Marking Code
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
May 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 6)
Steady
State
T
A
= 25°C (Note 4)
T
A
= 85°C (Note 4)
T
A
= 25°C (Note 5)
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±8
1.32
0.94
1.78
8
Unit
V
V
A
A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θJA
R
θJA
T
J
,
T
STG
Value
0.468
1.2
267
104
-55 to +150
Unit
W
W
°C/W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
-
-
0.45
-
-
-
40
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
0.7
67.62
9.74
7.58
68.51
0.89
0.14
0.16
4.92
6.93
21.71
10.62
Max
-
1
10
0.95
175
240
360
-
1.2
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
μA
V
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 300mA
V
GS
= 2.5V, I
D
= 250mA
V
GS
= 1.8V, I
D
= 100mA
V
DS
= 3V, I
D
= 30mA
V
GS
= 0V, I
S
= 300mA
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 1A
V
DS
= 10V, I
D
= 1A
V
GS
= 4.5V, R
G
= 6Ω
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
2 of 6
www.diodes.com
May 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
2.0
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 2.0V
2.0
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 1.5V
I
D
, DRAIN CURRENT (A)
1.5
V
GS
= 1.8V
1.5
1.0
1.0
0.5
V
GS
= 1.2V
0.5
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.4
0.8
V
GS
= 4.5V
0.3
0.6
0.2
V
GS
= 2.5V
V
GS
= 4.5V
0.4
T
A
= 125°C
T
A
= 150°C
0.1
0.2
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
0
0.25
0.5 0.75 1
1.25 1.5 1.75
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2
0
0.4
0.8
1.2
1.6
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
1.4
V
GS
= 4.5V
I
D
= 1.0A
V
GS
= 2.5V
I
D
= 500mA
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.6
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.8
0.6
1.2
0.4
V
GS
= 2.5V
I
D
= 500mA
1.0
0.2
V
GS
= 4.5V
I
D
= 1.0A
0.8
0.6
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
3 of 6
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May 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
1.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.0
1.0
I
S
, SOURCE CURRENT (A)
1.6
0.8
I
D
= 1mA
1.2
T
A
= 25°C
0.6
I
D
= 250µA
0.8
0.4
0.2
0.4
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
T
A
= 125°C
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
100,000
I
DSS
, LEAKAGE CURRENT (nA)
I
GSS
, LEAKAGE CURRENT (nA)
10,000
T
A
= 150°C
T
A
= 125°C
100
1,000
T
A
= 85°C
T
A
= 85°C
100
T
A
= 25°C
10
T
A
= 25°C
T
A
= -55°C
T
A
= -55°C
10
1
2
4
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Leakage Current
vs. Drain-Source Voltage
20
1
2
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig.10 Leakage Current vs. Gate-Source Voltage
4
8
V
GS
, GATE-SOURCE VOLTAGE (V)
6
V
DS
= 15V
I
D
= 1A
4
2
0
0
0.5
1
1.5
2
2.5
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
3
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
4 of 6
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May 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 262°C/W
P(pk)
D = 0.02
0.01
D = 0.01
t
1
D = 0.005
D = Single Pulse
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
A
A1
D
b1
E
b2
e
DFN1006-3
Dim Min
Max Typ
A
0.47
0.53 0.50
A1
0
0.05 0.03
b1
0.10
0.20 0.15
b2
0.45
0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35
⎯
⎯
L1
0.20
0.30 0.25
L2
0.20
0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
L2
L3
L1
Suggested Pad Layout
C
X
1
X
G2
G1
Y
Z
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
5 of 6
www.diodes.com
May 2011
© Diodes Incorporated
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