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HMC633

Description
5000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
CategoryWireless rf/communication    Radio frequency and microwave   
File Size337KB,8 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Environmental Compliance
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HMC633 Overview

5000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

HMC633 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerHittite Microwave(ADI)
package instructionDIE OR CHIP
Reach Compliance Codecompli
ECCN codeEAR99
Characteristic impedance50 Ω
structureCOMPONENT
Gain26 dB
Maximum input power (CW)5 dBm
Number of functions1
Maximum operating frequency17000 MHz
Minimum operating frequency5000 MHz
Maximum operating temperature85 °C
Minimum operating temperature-55 °C
Encapsulate equivalent codeDIE OR CHIP
power supply5 V
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
technologyGAAS
HMC633
v00.1107
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
Features
gain: 29 db
p1db: +23 dbm
output ip3: +30 dbm
saturated power: +24 dbm @ 27% pAe
supply voltage: +5v @ 180 mA
50 ohm matched input/output
die size: 2.07 x 0.93 x 0.1 mm
2
Amplifiers - driver & gAin block - chip
Typical Applications
The hmc633 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• LO Driver for Mixers
• Military & Space
Functional Diagram
General Description
The hmc633 is a gaAs mmic phemT driver
Amplifier die which operates between 5 and 17 ghz.
The amplifier provides up to 31 db of gain, +30 dbm
output ip3, and +23 dbm of output power at 1 db
gain compression, while requiring 180 mA from a +5v
supply. The hmc633 is an ideal driver amplifier for
microwave radio applications from 5 to 17 ghz, and
may also be biased at +5v, 130 mA to provide 2 db
lower gain with improved pAe. The hmc633 amplifier
i/o’s are dc blocked and internally matched to 50
ohms facilitating easy integration into multi-chip-
modules (mcms). All data is taken with die connected
at input and output rf ports via one 1 mil wedge bond
with minimal length of 0.31 mm (12 mils).
Electrical Specifications,
T
A
= +25° C, Vdd1, Vdd2, Vdd3, Vdd4 = 5V, Idd = 180 mA
[1]
parameter
frequency range
gain
gain variation over Temperature
input return loss
output return loss
output power for 1 db compression (p1db)
saturated output power (psat)
output Third order intercept (ip3)
noise figure
supply current (idd= idd1 + idd2 + idd3 + idd4)
[1]
min.
Typ.
5-9
max.
min.
Typ.
9 - 17
max.
Units
ghz
db
27
31
0.035
14
15
0.044
26
29
0.040
16
12
0.050
db/ °c
db
db
dbm
dbm
dbm
db
mA
21
23
24
30
9
180
21
23
23.5
30
7
180
Adjust Vgg between -2 to 0V to achieve Idd = 180mA Typical
2-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC633 Related Products

HMC633 HMC633_11
Description 5000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 5000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
structure COMPONENT COMPONENT
Gain 26 dB 26 dB
Number of functions 1 1
Maximum operating frequency 17000 MHz 17000 MHz
Minimum operating frequency 5000 MHz 5000 MHz
Maximum operating temperature 85 °C 85 Cel
Minimum operating temperature -55 °C -55 Cel
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