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UMA6N

Description
Emitter common (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size47KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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UMA6N Overview

Emitter common (dual digital transistors)

UMA6N Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)100
Number of components2
Polarity/channel typePNP
surface mountYES
Transistor component materialsSILICON
EMA6 / UMA6N
Transistors
Emitter common (dual digital transistors)
EMA6 / UMA6N
Feature
1) Two DTA144T chips in a EMT or UMT package.
External dimensions
(Unit : mm)
EMA6
0.22
(4)
(3)
(2)
(5)
Equivalent circuit
EMA6 / UMA6N
(3)
(2)
(1)
0.13
1.2
1.6
(1)
R
1
R
1
ROHM : EMT5
(4)
(5)
Each lead has same dimensions
(4)
(3)
0.65 0.65
UMA6N
0.2
0.5
1.3
0.5 0.5
1.0
1.6
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMA6
EMT5
A6
T2R
8000
UMA6N
UMT5
A6
TR
3000
ROHM : UMT5
EIAJ : SC-88A
0.15
(5)
1.25
2.1
(1)
0.1Min.
0 to 0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1
120mW per element must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
−50
−50
−5
−100
150(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
∗1
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
−50
−50
−5
100
32.9
Typ.
250
250
47
Max.
−0.5
−0.5
−0.3
600
61.1
Unit
V
V
V
µA
µA
V
MHz
kΩ
I
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −50V
V
EB
= −4V
Conditions
I
C
/I
B
= −5mA/ −0.5mA
V
CE
/I
C
= −5V/ −1mA
V
EB
= −10V,
I
E
=5mA,
f=100MHz
0.7
Rev.A
0.9
2.0
(2)
1/2

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Description Emitter common (dual digital transistors) Emitter common (dual digital transistors)

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