EDI414096C150NM datasheet, PDF

EDI414096C150NM: DescriptionDRAM, 4MX1, 150ns, CMOS, CDSO20,; Categorystorage storage; File Size39KB，1 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI414096C150NM Overview

DRAM, 4MX1, 150ns, CMOS, CDSO20,

Parameter Name	Attribute value
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	150 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code	R-CDSO-J20
memory density	4194304 bit
Memory IC Type	OTHER DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	20
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	4MX1
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
refresh cycle	2048
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	J BEND
Terminal location	DUAL

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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