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G4S06508QT

Description
,YES,DFN8*8,single core,650,8(130°C),15.2(100°C),25.7,90,1.29,0.2,50,2.5(150°C),100(150°C)
CategoryDiscrete semiconductor   
File Size517KB,5 Pages
ManufacturerGlobal Power Technology Co., Ltd
Download Datasheet Parametric View All

G4S06508QT Overview

,YES,DFN8*8,single core,650,8(130°C),15.2(100°C),25.7,90,1.29,0.2,50,2.5(150°C),100(150°C)

G4S06508QT Parametric

Parameter NameAttribute value
AEC-Q101 Qualified
RoHS QualifiedYES
PackageDFN8*8
Config.single core
Vrrm(V)650
IF(A) Tc=160℃8(130°C)
IF(A) Tc=125℃15.2(100°C)
IF(A) Tc=25℃25.7
Ifsm(A) Tc=25℃90
RTH-JC(℃/W)typ1.29
Forward voltage drop VF (V) Tj=25℃ typ1.4
Forward voltage drop VF (V) Tj=25℃ max1.7
Forward voltage drop VF (V) Tj=175℃ typ1.75(150°C)
Forward voltage drop VF (V) Tj=175℃ max2.5(150°C)
Reverse leakage current IR (uA) Tj=25℃ typ0.2
Reverse leakage current IR (uA) Tj=25℃ max50
Reverse leakage current IR (uA) Tj=175℃ typ2.5(150°C)
Reverse leakage current IR (uA) Tj=175℃ max100(150°C)
产品规格书
V2020.A.0
G4S06508QT
650V/8A
碳化硅肖特基功率二极管
产品特性
正温度系数,易于并联½用
不受温度½响的开关特性
最高工½温度 150℃
零反向恢复电流
零正向恢复电压
产品概览
V
RRM
I
F,
T
c
≤130℃
Q
C
650
8
21
V
A
nC
产品优点
单极器件
极大降½开关损耗
并联器件中没有热崩溃
降½系统对散热片的依赖
应用领域
开关模式电源(SMPS),功率因数校正(PFC)
电机驱动,光伏逆变器,不间断电源,
风力发动机,列½牵引系统,电动½½。
产品型号
G4S06508QT
封装½式
DFN8*8
打标
G4S06508QT
G4S06508QT
©2020
泰科天润半导½科技(北京)有限公司
-
版权所有
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