NEC's SiGe
LOW NOISE AMPLIFIER FOR UPC8211TK
GPS/MOBILE COMMUNICATIONS
FEATURES
• LOW NOISE:
N
F
= 1.3 dB TYP.
• HIGH GAIN:
G
P
= 18.5 dB TYP.
• LOW CURRENT CONSUMPTION:
I
CC
= 3.5 mA TYP. at V
CC
= 3.0 V
• BUILT-IN POWER SAVE FUNCTION:
• HIGH-DENSITY SURFACE MOUNTING:
6-pin lead less minimold package ( 1.5 x 1.3 x 0.55 mm)
INTERNAL BLOCK DIAGRAM
Input 1
GND 2
Bias
6 Vcc
5 GND
PS 3
4 Output
APPLICATION
• Low Noise amplifier for GPS and mobile communications
• General purpose low noise amplifier
DESCRIPTION
NEC's UPC8211TK is a silicon germanium (SiGe) monolithic
integrated circuit designed as low noise amplifier for GPS and
as a general low nois amplifier for mobile communications.
The package is 6-pin lead-less minimold (1.5 x 1.3 x 0.55 mm)
suitable for surface mount and optimized for very densely
populated compact designs.
This IC is manufactured using NEC's 60 GHz f
T
UHS2 (Ultra
High Speed Process) silicon bipolar process. This process
can realize excellent low noise peformance and low power
consumption simultaneously.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, T
A
= +25°C, V
CC
= 3.0 V, f
in
= 1575 MHz, V
PS
= 3.0 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
GP
NF
IIP
3
RL
IN
RL
OUT
ISO
V
PS ON
V
PS OFF
Flat
P
o(1 dB)
P
o
PARAMETERS AND CONDITIONS
Circuit Current (no input signal)
At power save mode (V
PS
< 0.8V)
Power Gain
Noise Figure
3rd Order Distortion Input Intercept Point (Gain = 18.5 dB)
Input Return Loss
Output Return Loss
Isolation
Rising Voltage from Power-Saving Mode
Falling Voltage from Power-Saving Mode
Gain Flatness (fin ±2.5 MHz)
Gain1 dB Compression Output Power
Output Power
UNITS
mA
μA
dB
dB
dBm
dB
dB
dBm
V
V
dB
dBm
dBm
MIN
–
–
15.5
–
–
–
–
–
2.2
–
–
–
-1.5
UPC8211TK
S06
TYP
3.5
–
18.5
1.3
-12
-7.5
-14.5
-32.5
–
–
–
-4
+2.0
MAX
4.5
1
21.5
1.5
–
-6
-10
–
–
0.8
Δ0.5
–
–
California Eastern Laboratories
京公网安备 11010802033920号
EEWORLD
