MMBT2131T1G
General Purpose
Transistors
PNP Bipolar Junction Transistor
NOTE: Voltage and Current are negative for the PNP Transistor.
Features
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•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25°C
Total Power Dissipation @ T
C
= 85°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
C
= 25°C
Total Power Dissipation @ T
C
= 85°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Operating and Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
P
D
R
qJA
P
D
P
D
R
qJA
T
J
, T
stg
Value
30
40
5.0
700
350
342
178
366
665
346
188
−55
to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
0.7 AMPERES
30 VOLTS
−
V
(BR)CEO
342 mW
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
4
6 5
1 2
3
(PINS 1, 4
NO CONNECT)
SC−74
CASE 318F
STYLE 2
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Operating to Steady State.
DBMG
G
DB = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MMBT2131T1G
Package
SC−74
(Pb−Free)
Shipping
†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
March, 2013
−
Rev. 5
1
Publication Order Number:
MMBT2131T1/D
MMBT2131T1G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Base
Breakdown Voltage
Collector
−Emitter
Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector
−Emitter
Saturation Voltage
Collector
−Emitter
Saturation Voltage
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
(V
CE
= 3.0 V, I
C
= 100 mA)
(I
C
= 500 mA, I
B
= 50 mA)
(I
C
= 700 mA, I
B
= 70 mA)
(I
C
= 700 mA, I
B
= 70 mA)
(I
C
= 700 mA, V
CE
= 1.0 V)
h
FE
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(on)
150
−
−
−
−
−
−
−
−
−
−
0.25
0.4
1.1
1.0
V
V
V
V
V
(I
C
= 100
mA)
(I
C
= 10 mA)
(I
E
= 100
mA)
(V
CB
= 25 V, I
E
= 0 A)
(V
CB
= 25 V, I
E
= 0 A, T
A
= 125°C)
(V
EB
= 5.0 V, I
C
= 0 A)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
40
30
5.0
−
−
−
−
−
−
−
−
−
−
−
−
1.0
10
10
V
V
V
mA
mA
Symbol
Min
Typ
Max
Unit
TYPICAL CHARACTERISTICS
0.5
0.2
0.5 A
0.15
VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V)
0.4
0.3
0.7 A
0.2
0.5 A
0.1
I
C
= 1.0 mA
0
0.000001 0.00001
0.0001
0.001
0.01
0.1
I
B
, BASE CURRENT (A)
10 mA
0.1 A
VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V)
0.1
0.1 A
0.05
I
C
= 1.0 mA
0
0.000001 0.00001
0.0001
0.001
0.01
0.1
I
B
, BASE CURRENT (A)
10 mA
Figure 1. Collector Saturation Region
1000
V
CE
= 3.0 V
h FE , DC CURRENT GAIN
1.0
Figure 2. Collector Saturation Region
V
BE(sat)
150°C
25°C
-40°C
VOLTAGE (V)
0.1
V
CE(sat)
100
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
1.0
0.01
0.001
0.01
0.1
I
C
/I
B
= 10
1.0
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
http://onsemi.com
2
Figure 4. “ON” Voltages
MMBT2131T1G
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01,
−02, −03, −04
OBSOLETE. NEW STANDARD 318F−05.
DIM
A
A1
b
c
D
E
e
L
H
E
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
H
E
6
1
5
2
4
3
E
b
e
q
0.05 (0.002)
A1
A
L
C
SOLDERING FOOTPRINT*
2.4
0.094
NO CONNECTION
COLLECTOR
EMITTER
NO CONNECTION
COLLECTOR
BASE
1.9
0.074
0.7
0.028
1.0
0.039
0.95
0.037
0.95
0.037
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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4
MMBT2131T1/D
Embedded System
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