SiB437EDKT-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
-8
±5
- 9
a
- 9
a
- 7.5
b, c
- 6
b, c
- 25
- 9
a
- 2
b, c
13
8.4
2.4
b, c
1.6
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
A
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
b, f
t
5s
Steady State
Symbol
R
thJA
R
thJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 67402
S11-0235-Rev. A, 14-Feb-11
www.vishay.com
1
New Product
SiB437EDKT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 3 A
V
GS
= - 1.8 V, I
D
= - 1 A
V
GS
= - 1.5 V, I
D
= - 0.5 A
V
GS
= - 1.2 V, I
D
= - 0.5 A
V
DS
= - 4 V, I
D
= - 3 A
Min.
-8
Typ.
Max.
Unit
V
-2
2.2
- 0.35
- 0.7
±5
-1
- 10
- 15
0.028
0.050
0.060
0.100
14
10.5
16
0.034
0.063
0.084
0.180
mV/°C
V
µA
A
Drain-Source On-State Resistance
a
R
DS(on)
Forward Transconductance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
g
fs
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
S
nC
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 7.4 A
f = 1 MHz
V
DD
= - 4 V, R
L
= 0.7
I
D
- 6 A, V
GEN
= - 4.5 V, R
g
= 1
80
1.5
3.3
400
90
170
690
630
800
180
340
1380
1260
-9
- 25
- 0.8
30
12
12
18
- 1.2
60
25
ns
T
C
= 25 °C
I
S
= - 6 A, V
GS
= 0 V
A
V
ns
nC
ns
I
F
= - 6 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67402
S11-0235-Rev. A, 14-Feb-11
New Product
SiB437EDKT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
6.000
1.E-02
1.E-03
1.E-04
4.000
I
GSS
- Gate Current (A)
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
0.000
0
2
4
6
8
10
1.E-10
0
2
4
6
8
10
T
J
= 25
°C
T
J
= 150
°C
5.000
I
GSS
- Gate Current (mA)
3.000
T
J
= 25
°C
2.000
1.000
V
GS
- Gate-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
25
V
GS
= 5 V thru 2.5 V
20
V
GS
= 2 V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
15
3
4
5
Gate Current vs. Gate-Source Voltage
T
C
= 25
°C
2
10
V
GS
= 1.5 V
5
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.20
6
Transfer Characteristics
0.16
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
5
I
D
= 7.4 A
V
DS
= 2 V
4
V
DS
= 4 V
V
DS
= 6.4 V
0.12
V
GS
= 1.2 V
0.08
V
GS
= 1.5 V
V
GS
= 1.8 V
3
2
0.04
V
GS
= 4.5 V
1
0.00
0
5
10
15
20
25
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Gate Charge
Document Number: 67402
S11-0235-Rev. A, 14-Feb-11
www.vishay.com
3
New Product
SiB437EDKT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.3
V
GS
= 4.5 V; I
D
= 3 A
1.2
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 1.8 V; I
D
= 1 A
V
GS
= 1.5 V; I
D
= 0.5 A
1.1
I
S
- Source Current (A)
10
T
J
= 150
°C
100
1.0
V
GS
= 1.2 V; I
D
= 0.5 A
1
T
J
= 25
°C
0.9
0.8
- 50
- 25
0
25
50
75
100
125
150
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.14
0.12
R
DS(on)
- On-Resistance (Ω)
0.10
0.08
I
D
= 0.5 A; T
J
= 125
°C
0.06
I
D
= 3 A; T
J
= 25
°C
0.04
I
D
= 0.5 A; T
J
= 25
°C
0.02
0.00
0.0
0.2
- 50
0.3
I
D
= 3 A; T
J
= 125
°C
0.6
0.7
Soure-Drain Diode Forward Voltage
I
D
= 250 μA
V
GS(th)
(V)
0.5
0.4
1.0
2.0
3.0
4.0
5.0
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
20
100
Threshold Voltage
Limited by R
DS(on)
*
15
I
D
- Drain Current (A)
10
100 μs
1 ms
Power (W)
10
1
10 ms
100 ms
1 s, 10 s
5
0.1
DC
T
A
= 25
°C
Single Pulse
BVDSS Limited
1
10
100
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
0.01
0.1
Single Pulse Power, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67402
S11-0235-Rev. A, 14-Feb-11
New Product
SiB437EDKT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
15
16
I
D
- Drain Current (A)
12
12
Package Limited
8
Po
w
er (W)
9
6
4
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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Microcontroller MCU
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