FSAD20SH60
FSAD20SH60
Smart Power Integrated Module (SPIM)
General Description
FSAD20SH60 is an advanced smart power integrated
module (SPIM) that Fairchild has newly developed and
designed to provide very compact and high performance ac
motor drives mainly targeting high speed low-power
inverter-driven application like servo drive system. It
combines optimized circuit protection and drive matched to
low-loss IGBTs. Highly effective short-circuit current
detection/protection is realized through the use of
advanced current sensing IGBT chips that allow continuous
monitoring of the IGBTs current. System reliability is further
enhanced by the built-in over-temperature and integrated
under-voltage lock-out protection. The high speed built-in
HVIC provides opto-coupler-less IGBT gate driving
capability that further reduce the overall size of the inverter
system design. In addition the incorporated HVIC facilitates
the use of single-supply drive topology enabling the
FSAD20SH60 to be driven by only one drive supply voltage
without opto-couplers. Inverter current sensing application
can be achieved due to devided negative dc terminals.
Features
• UL Certified No. E209204
• Three-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Converter bridge for three-phase AC-to-DC power
conversion
• Circuit for dynamic braking of motor regeneration energy
• Divided negative dc-link terminals for inverter current
sensing applications
• Single-grounded power supply due to built-in HVIC
• Typical switching frequency of 15kHz
• Built-in thermistor for over-temperature monitoring
• Inverter power rating of 1.5kW / 100~253 Vac
• Very low thermal resistance due to using DBC substrate
• Isolation rating of 2500Vrms/min.
• Adjustable current protection level by varying series
resistor value with sense-IGBTs
Applications
• AC 100V ~ 253V three-phase inverter drive for small
power ac motor drives
• Industrial applications requiring high switching frequency
operation like servo drive system
• Application ratings:
- Power : 1.5 kW / 100~253 Vac
- Switching frequency : Typical 15kHz (PWM Control)
- 100% load current : 7A (Irms)
- 150% load current : 10.5A (Irms) for 1 minute
Top View
Bottom View
75.5mm
50mm
12mm
Fig. 1. External View
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
FSAD20SH60
Integrated Power Functions
• IGBT inverter for three-phase DC/AC power conversion (Please refer to Fig. 3)
• Diode converter for three-phase AC/DC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting,
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 13 and 14.
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC),
Control supply circuit under-voltage (UV) protection
• For Brake circuit IGBT : Drive circuit
• Temperature Monitoring: System over-temperature monitoring using built-in thermistor
Note) Available temperature monitoring circuit is given in Fig. 14.
• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side supply)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Bottom View
(1) R
TH
(2) V
TH
(3) R
SC
(4) C
SC
(5) C
FOD
(6) V
FO
(7) IN
(WL)
(8) IN
(VL)
(9) IN
(UL)
(10) COM
(11) V
CC
(12) IN
(WH)
(13) IN
(VH)
(14) IN
(UH)
(15) IN
(DB)
(16) V
B(W)
(17) V
S(W)
(18) V
B(V)
(19) V
S(V)
(20) V
B(U)
(21) V
S(U)
(22) R
(23) S
(24) T
(25) N
R
(26) N
B
(27) N
W
(28) N
V
(29) N
U
(30) W
(31) V
(32) U
(33) P
(34) P
R
(35) B
Fig. 2. Pin Configuration
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
FSAD20SH60
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Pin Name
R
TH
V
TH
R
SC
C
SC
C
FOD
V
FO
IN
(WL)
IN
(VL)
IN
(UL)
COM
V
CC
IN
(WH)
IN
(VH)
IN
(UH)
IN
(DB)
V
B(W)
V
S(W)
V
B(V)
V
S(V)
V
B(U)
V
S(U)
R
S
T
N
R
N
B
N
W
N
V
N
U
W
V
U
P
P
R
B
Pin Description
Series Resistor for the Use of Thermistor (Temperature Detection)
Thermistor Bias Voltage
Resistor for Short-Circuit Current Detection
Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input
Capacitor for Fault Output Duration Time Selection
Fault Output
Signal Input for Low-side W Phase
Signal Input for Low-side V Phase
Signal Input for Low-side U Phase
Common Supply Ground
Common Bias Voltage for IC and IGBTs Driving
Signal Input for High-side W Phase
Signal Input for High-side V Phase
Signal Input for High-side U Phase
Signal Input for Dynamic Braking
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
AC Input for R phase
AC Input for S phase
AC Input for T phase
Negative DC-Link Output
Emitter of Brake IGBT
Negative DC-Link Input for W phase
Negative DC-Link Input for V phase
Negative DC-Link Input for U phase
Output for W Phase
Output for V Phase
Output for U Phase
Positive DC-Link Input
Positive DC-Link Output
Collector of Brake IGBT
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
FSAD20SH60
P R (2 5 )
(2 2 ) R
(2 3 ) S
(2 4 ) T
N R (2 5 )
( 1 5 ) IN
(D B )
IN
VCC
COM
OUT
N B (2 6 )
B (3 5 )
( 1 6 ) V
B (W )
P (3 3 )
VB
VCC
OUT
VS
W (3 0 )
( 1 2 ) IN
(W H )
( 1 7 ) V
S (W )
( 1 8 ) V
B (V )
COM
IN
VB
VCC
OUT
VS
V (3 1 )
( 1 3 ) IN
COM
(V H )
( 1 9 ) V
S (V )
( 2 0 ) V
B (U )
IN
VB
VCC
OUT
VS
U (3 2 )
( 1 4 ) IN
(U H )
( 2 1 ) V
S (U )
COM
IN
(3 ) R
SC
(4 ) C
SC
(5 ) C
FO D
(6 ) V
FO
C (S C )
C (F O D )
VFO
O U T (W L )
N
W
(2 7 )
( 7 ) I N
(W L )
( 8 ) I N
(V L )
( 9 ) I N
(U L )
(1 0 ) C O M
IN ( W L )
IN ( V L )
IN ( U L )
C O M (L )
O U T (U L )
N
U
(2 9 )
O U T (V L )
N
V
(2 8 )
(1 1 ) V
CC
VCC
(2 ) V
T H
(1 ) R
T H
T H E R M IS T O R
Note:
1) Inverter low-side is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving and protection
functions.
2) Inverter high-side is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
Fig. 3. Internal Equivalent Circuit and Input/Output Pins
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
FSAD20SH60
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part (Including Brake Part)
Item
Supply Voltage
Supply Voltage (Surge)
Collector-Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Brake IGBT Collector Current
Brake IGBT Collector Current (Peak)
Brake Diode Anode Current
Brake Diode Anode Current (Peak)
Collector Dissipation
Operating Junction Temperature
Symbol
V
PN
V
PN(Surge)
V
CES
± I
C
± I
CP
I
C
I
CP
I
F
I
FP
P
C
T
J
Unless Otherwise Specified)
Condition
Applied between P-N
U
, N
V
, N
W
Applied between P- N
U
, N
V
, N
W
,
Surge Value
T
C
= 25°C
T
C
= 25°C, Instantaneous Value
(Under 1ms)
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Per One Chip
(Note 1)
Rating
450
500
600
20
40
20
40
20
40
66
-20 ~ +125
Unit
V
V
V
A
A
A
A
A
A
W
℃
Note:
1. It would be recommended that the average junction temperature should be limited to T
J
≤125
(T
C
≤100)
in order to guarantee safe operation.
Converter Part
Item
Repetitive Peak Reverse Voltage
Recommended AC Input Voltage
DC Output Current
Surge (non-repetitive) Forward Current
I t for Fusing
2
Symbol
V
RRM
E
a
I
O
I
FSM
I t
2
Condition
Rating
900
220
Unit
V
V
A
A
A
2
s
3-Phase Rectifying Circuit
1 Cycle at 60Hz, Peak Value Non-repetitive
Value for One Cycle of Surge Current
23
250
260
Control Part
Item
Control Supply Voltage
High-side Control Bias Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Symbol
Condition
V
CC
Applied between V
CC
- COM
V
BS
V
IN
V
FO
I
FO
V
SC
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
,
IN
(UL)
, IN
(VL)
, IN
(WL)
, IN
(DB)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
Applied between C
SC
- COM
Rating
20
20
-0.3 ~ V
CC
+0.3
-0.3~V
CC
+0.3
5
-0.3~V
CC
+0.3
Unit
V
V
V
V
mA
V
Total System
Item
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Symbol
Condition
V
PN(PROT)
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 125°C, Non-repetitive, less than 6µs
T
C
T
STG
V
ISO
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat-sink Plate
Center of DBC Plate
Rating
400
-20 ~ +100
-20 ~ +125
2500
Unit
V
°C
°C
V
rms
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
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