MJD31/31C — NPN Epitaxial Silicon Transistor
November 2010
MJD31/31C
NPN Epitaxial Silicon Transistor
Features
•
•
•
•
•
General Purpose Amplifier
Low Speed Switching Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP31 and TIP31C
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
: MJD31
: MJD31C
: MJD31
: MJD31C
Value
40
100
40
100
5
3
5
1
15
1.56
150
- 65 to 150
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: MJD31
: MJD31C
Collector Cut-off Current
: MJD31
: MJD31C
Collector Cut-off Current
: MJD31
: MJD31C
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= 30mA, I
B
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 375mA
V
CE
= 4A, I
C
= 3A
V
CE
= 10V, I
C
= 500mA
Min.
40
100
Max.
Units
V
V
I
CEO
50
50
20
20
1
25
10
50
1.2
1.8
μA
μA
μA
μA
mA
I
CES
I
EBO
h
FE
* Collector-Emitter Saturation Voltage
V
CE
(sat)
* Base-Emitter On Voltage
V
BE
(on)
f
T
Current Gain Bandwidth Product
* Pulse Test: PW≤300μs, Duty Cycle≤2%
3
V
V
MHz
© 2010 Fairchild Semiconductor Corporation
MJD31/31C Rev. A3
1
www.fairchildsemi.com
MJD31/31C — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 2V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
1
V
BE
(sat)
10
0.1
V
CE
(sat)
1
0.01
0.1
1
10
0.01
1E-3
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
t
C
= 10.I
B
C
ob
[pF], CAPACITANCE
t
R
, t
D
[
μ
s], TURN ON TIME
100
1
t
R
, V
CC
=30V
t
R
, V
CC
=10V
0.1
10
t
D
, V
BE
(off)=2V
1
0.1
1
10
100
0.01
0.1
1
10
V
CB
[V], COLLECTOR BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance
10
Figure 4. Turn On Time
t
C
= 10.I
B
I
CP
(max)
s
0
μ
10
t
F
,t
STG
[
μ
s], TURN OFF TIME
s
0
μ
50
I
C
[A], COLLECTOR CURRENT
I
C
(max)
s
1m
1
1
t
STG
t
F
, V
CC
=30V
DC
t
F
, V
CC
(off)=10V
0.1
0.1
0.01
0.1
1
10
0.01
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating
© 2010 Fairchild Semiconductor Corporation
MJD31/31C Rev. A3
2
MJD31
MJD31C
www.fairchildsemi.com
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Rev. I50
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