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MPSA42L34Z

Description
Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size882KB,14 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

MPSA42L34Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92

MPSA42L34Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
MPSA42 / MMBTA42 / PZTA42
MPSA42
MMBTA42
C
PZTA42
C
E
C
B
E
C
B
TO-92
E
SOT-23
Mark: 1D
B
SOT-223
NPN High Voltage Amplifier
This device is designed for application as a video output to
drive color CRT and other high voltage applications. Sourced
from Process 48.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
300
300
6.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSA42
625
5.0
83.3
200
Max
*MMBTA42
350
2.8
357
**PZTA42
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
1997 Fairchild Semiconductor Corporation
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