January 1998
NDS8426A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
10.5 A, 20 V. R
DS(ON)
= 0.0135
Ω
@ V
GS
= 4.5 V.
R
DS(ON)
= 0.016
Ω
@ V
GS
= 2.7 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
5
6
7
8
4
3
2
1
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
NDS8426A
20
±8
10.5
30
2.5
1.2
1
-55 to 150
Units
V
V
A
W
T
J
,T
STG
R
θJA
R
θJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
NDS8426A Rev.B
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 16 V, V
GS
= 0 V
T
J
= 55°C
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 10.5 A
T
J
= 125°C
V
GS
= 2.7 V, I
D
= 10 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 10 V,
I
D
= 10.5 A, V
GS
= 4.5 V
V
DD
= 5 V, I
D
= 1 A,
V
GEN
= 4.5 V, R
GEN
= 6
Ω
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 10.5 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
30
43
2150
890
165
11
26
145
40
43
7
8
30
55
220
100
60
0.4
0.3
0.6
0.5
0.012
0.017
0.014
20
1
10
100
-100
1
0.8
0.0135
0.024
0.016
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
µA
µA
nA
nA
V
ON CHARACTERISTICS
(Note 2)
Ω
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
(Note 2)
NDS8426A Rev.B
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
S
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Parameter
Continuous Source Diode Current
Drain-Source Diode Forward Voltage
Conditions
Min
Typ
Max
2.1
Units
A
V
DRAIN-SOURCE DIODE CHARACTERISTICS
V
GS
= 0 V, I
S
= 2.1 A
0.6
1.2
(Note 2)
P
D
(
t
) =
T
J
−T
A
R
θJA
(t)
=
T
J
−T
A
R
θJC
+R
θCA
(t)
=
I
2
(
t
) ×
R
DS(ON)@T
J
D
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 105
o
C/W when mounted on a 0.04 in
2
pad of 2oz copper.
c. 125
o
C/W when mounted on a 0.006 in
2
pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS8426A Rev.B
1
Typical Electrical Characteristics
40
I
D
, DRAIN-SOURCE CURRENT (A)
1.8
V
GS
=4.5V
3.5
2.7
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
2.0
1.6
30
1.4
V
GS
= 2.0 V
20
1.5
1.2
2.5
2.7
3.0
3.5
10
1
4.5
0
0
0.5
1
1.5
2
0.8
0
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
16
24
I
D
, DRAIN CURRENT (A)
32
40
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
.
1.6
1.8
I
D
= 10.5A
DRAIN-SOURCE ON-RESISTANCE
V
GS
=4.5V
1.6
1.4
1.2
1
0.8
0.6
0.4
DRAIN-SOURCE ON-RESISTANCE
1.4
R
DS(ON)
, NORMALIZED
1.2
R
DS(on)
, NORMALIZED
V
GS
= 4.5V
TJ = 125°C
25°C
1
0.8
-55°C
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
0
10
20
I
D
, DRAIN CURRENT (A)
30
40
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
40
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= 5V
32
T J = -55°C
125
1.3
25
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-50
-25
V
DS
= V
GS
I
D
= 250µA
I
D
, DRAIN CURRENT (A)
24
16
8
0
0
0.5
1
1.5
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
V
GS(th)
, NORMALIZED
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation
with Temperature
.
NDS8426A Rev.B
1
Typical Electrical Characteristics
(continued)
1.12
30
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.08
I
S
, REVERSE DRAIN CURRENT (A)
I
D
= 250µA
10
V
GS
= 0V
TJ = 125°C
25°C
BV
DSS
, NORMALIZED
1
1.04
0.1
-55°C
1
0.01
0.96
0.001
0.92
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.0001
0
0.3
0.6
0.9
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 7. Breakdown Voltage Variation
with Temperature
.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature
.
5000
3000
2000
CAPACITANCE (pF)
V
GS
, GATE-SOURCE VOLTAGE (V)
4
I
D
= 10.5A
Ciss
3
V
DS
= 5V
10V
15V
1000
Coss
2
500
200
f = 1 MHz
V
GS
= 0 V
0 .2
0 .5
1
2
5
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
1
Crss
10
15 20
100
0 .1
0
0
8
16
24
Q
g
, GATE CHARGE (nC)
32
40
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics
.
V
DD
V
IN
D
t
on
t
off
t
r
90%
R
L
V
OUT
t
d(on)
t
d(off)
90%
t
f
V
GS
R
GEN
V
OUT
G
DUT
10%
10%
INVERTED
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDS8426A Rev.B
1
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