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Datasheet> All Categories > Discrete semiconductor> The transistor> 2N7225DPBF
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2N7225DPBF

Description
27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size232KB，8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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2N7225DPBF Overview

27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

2N7225DPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)27.4 A
Maximum drain-source on-resistance0.105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)110 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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2N7225DPBF Related Products

2N7225DPBF 2N7225UPBF 2N7225U 2N7225D
Description 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Is it Rohs certified? conform to conform to incompatible conform to
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ 500 mJ 500 mJ
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V 200 V 200 V
Maximum drain current (ID) 27.4 A 27.4 A 27.4 A 27.4 A
Maximum drain-source on-resistance 0.105 Ω 0.105 Ω 0.105 Ω 0.105 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA TO-254AA TO-254AA
JESD-30 code R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL METAL METAL
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 110 A 110 A 110 A 110 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1

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