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SUR530H

Description
Epitaxial planar PNP silicon transistor
CategoryDiscrete semiconductor    The transistor   
File Size266KB,5 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet Parametric View All

SUR530H Overview

Epitaxial planar PNP silicon transistor

SUR530H Parametric

Parameter NameAttribute value
MakerKODENSHI
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)70
Number of components2
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
SUR530H
Epitaxial planar PNP silicon transistor
Description
Dual chip digital transistor
Features
Two SRA2203 chips in SOT-353 package
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Package : SOT-353
Ordering Information
Type NO.
SUR530H
Marking
30H
Package Code
SOT-353
: Year & Week Code
Equivalent circuit & PIN Connections
Equivalent Circuit
R
1
R1
R2
R2
R1
R
2
22KΩ
22KΩ
Tr1
Tr2
Tr1
22KΩ
22KΩ
Tr2
4
5
PIN Connections
1. IN 1
2. COMMON 1,2
3. IN 2
4. OUT 2
5. OUT 1
Absolute Maximum Ratings
[Tr1,Tr2]
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
※:
Total rating
(Ta=25°C)
Symbol
V
O
V
I
I
O
P
D
T
J
T
stg
Rating
-50
-40, 10
-100
200
150
-55 ~ 150
Unit
V
V
mA
mW
°C
°C
KSD-R5R014-001
1

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