SUT465N
Dual NPN+PNP complementary Bipolar transistor
Descriptions
•
Complex type bipolar transistor
Features
•
Reduce quantity of parts and mounting cost
•
High collector power dissipation : P
C
=300mW(Max.)
•
2 NPN+PNP Chips in SOT-26 PKG
Package : SOT-26
Ordering Information
Type NO.
SUT465N
◇:
Hfe rank,
Marking
5N◇
□
Package Code
SOT-26
□
: Year & Week Code
PIN Assignment & Description
Pin
1
2
3
4
5
6
[Pin Assignment]
Description
Emitter 2
Base 2
Collector 1
Emitter 1
Base 1
Collector 2
Absolute Maximum Ratings
[Tr1, Tr2]
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
㎲
** : Total rating(Each terminal mounted on a recommended solder land)
KSD-T5P006-001
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
**
T
J
T
stg
Ratings
Tr1
Tr2
75
40
5
600
1.2
300
150
-55~150
-60
-40
-5
-600
-1.2
Unit
V
V
V
mA(DC)
A(AC)
mW
°C
°C
SUT465N
Electrical Characteristics
[ Tr1 ]
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Test Condition
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=75V, I
E
=0
V
CE
=10V, I
C
=10mA
I
C
=150mA, I
B
=15mA
V
CE
=20V, I
C
=20mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=30V
dc
, V
BE(off)
=0.5V
dc
,
I
C
=150mA
dc
, I
B1
=15mA
dc
V
CC
=30V
dc
,I
C
=150mA
dc
,
I
B1
=I
B2
=15mA
dc
Min. Typ. Max.
75
40
5
-
100
-
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
0.4
-
8
10
25
225
60
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
Electrical Characteristics
[ Tr2 ]
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
t
on
t
d
t
r
t
off
t
s
t
f
Test Condition
I
C
=-10μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-40V, I
E
=0
V
CE
=-10V, I
C
=-10mA
I
C
=-150mA, I
B
=-15mA
V
CE
=-5.0V, I
C
=-20mA,
f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
V
CC
=-30V
dc
,I
C
=-150mA
dc
,
I
B1
=-15mA
dc
Min. Typ. Max.
-60
-40
-5
-
100
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-20
-
-0.4
-
8
45
10
40
100
80
30
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
ns
ns
V
CC
=-6.0V
dc
,I
C
=-150mA
dc
,
I
B1
=I
B2
=-15mA
dc
-
-
KSD-T5P006-001
2
SUT465N
Electrical Characteristic Curves
[ Tr1 ]
Fig. 1 P
C-
T
a
½
Fig. 2 h
FE-
I
C
Fig. 3 V
CE(sat)
-I
C
Fig. 4 C
ob
-V
CB
[ Tr2 ]
Fig. 5 h
FE
-I
C
Fig. 6 V
CE(sat)
-I
C
KSD-T5P006-001
3
SUT465N
Electrical Characteristic Curves
Fig. 7 C
ob
-V
CB
KSD-T5P006-001
4
SUT465N
SOT-26 Outline Dimension(mm)
※
Recommend PCB solder land [Unit: mm]
KSD-T5P006-001
5
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