< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
DESCRIPTION
The MGFL48V1920 is a 60W push-pull type GaAs power FET
especially designed for use in 1.9 - 2.0 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
FEATURES
Push-pull configuration
High output power
Pout=60W (TYP.) @f=1.9 - 2.0GHz
High power gain
GLP=11.5dB (TYP.) @f=1.9 - 2.0GHz
High power added efficiency
P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz
APPLICATION
QUALITY
IG
item 01 : 1.9 - 2.0 GHz band power amplifier
RECOMMENDED BIAS CONDITIONS
VDS=12V
ID=4.0A
RG=20ohm for each gate
Keep Safety first in your circuit designs!
Absolute maximum ratings
Symbol
VGDO
VGSO
PT *1
Tch
Tstg
(Ta=25C)
Parameter
Gate to drain breakdown voltage
Gate to source breakdown voltage
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-20
-10
10
175
-65 to +175
Unit
V
V
W
C
C
*1 : Tc=25C
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics
Symbol
VGS(off)
P2dB
GLP
ID
P.A.E.
Rth(ch-c) *2
(Ta=25C)
Parameter
Gate to source cut-off voltage
Output power at 2dB gain compression
Test conditions
Min.
VDS=3V,ID=17.3mA
VDS=12V,ID(RF off)=4.0A
f=1.9 - 2.0GHz
-1
47
10
-
-
delta Vf method
-
Limits
Typ.
-
48
11.5
11
45
1.0
Unit
Max.
-4
-
-
15
-
1.4
V
dBm
dB
A
%
C/W
Linear Power Gain
Drain current
Power added efficiency
Thermal resistance
*2 :Channel-case
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
5
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