< High-power GaAs FET (small signal gain stage) >
MGF0911A
L & S BAND / 12W
non - matched
DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
Class A operation
High output power
P1dB=41.0dBm(TYP.) @f=2.3GHz
High power gain
GLP=11.0dB(TYP.)
@f=2.3GHz
High power added efficiency
P.A.E =40%(TYP.)
@f=2.3GHz,P1dB
Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
For UHF Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=2.6A
Rg=50
Refer to Bias Procedure
(Ta=25C)
Absolute maximum ratings
Symbol
V
GDO
V
GSO
I
D
I
GR
I
GF
P
T*1
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
10
-30
63
37.5
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
*1:Tc=25C
Electrical characteristics
Symbol
IDSS
gm
VGS(off)
P1dB
GLP
P.A.E.
Rth(ch-c) *2
(Ta=25C)
Parameter
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Test conditions
Min.
VDS=3V,VGS=0V
VDS=3V,ID=2.6A
VDS=3V,ID=20mA
VDS=10V,ID(RF off)=2.6A
f=2.3GHz
ΔVf
method
-
-
-2
40
10
-
-
Limits
Typ.
-
3
-
41
11
40
-
Unit
Max.
10
-
-5
-
-
-
4.0
A
S
V
dBm
dB
%
C/W
Linear Power Gain
Power added efficiency
Thermal resistance
*2 :Channel-case
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0911A
L & S BAND / 12W
non - matched
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Publication Date : Apr., 2011
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