< High-power GaAs FET (small signal gain stage) >
MGF0919A
L & S BAND / 1W
SMD non - matched
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
add=37%(TYP.)
@f=1.9GHz,Pin=12dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
Fig.1
Ids=300mA
Rg=500
RECOMMENDED BIAS CONDITIONS
Vds=10V
Delivery
-01:Tape
& Reel(1K),
-03:Trai(50pcs)
(Ta=25C)
Absolute maximum ratings
Symbol
V
GSO
I
D
I
GR
I
GF
P
T
Tch
Tstg
Parameter
Gate to sourcebreakdown voltage
Ratings
-15
-15
800
-2.4
10
6
175
-65 to +175
(Ta=25C)
Unit
V
V
mA
mA
mA
W
C
C
V
GDO Gate to drain breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Electrical characteristics
Symbol
I
DSS
V
GS(off)
gm
Po
add
G
LP
NF
Rth(ch-c)
Parameter
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance
*1
Test conditions
Min.
V
DS
=3V,V
GS
=0V
V
DS
=3V,I
D
=2.0mA
V
DS
=3V,I
D
=300mA
V
DS
=10V,I
D
=300mA,f=1.9GHz
Pin=12dBm
V
DS
=10V,I
D
=300mA,f=1.9GHz
Vf
Method
-
-1
-
28
-
17
-
-
Limits
Typ.
600
-
260
30
37
19
1.2
17
Max.
800
-5
-
-
-
-
-
25
Unit
mA
V
mS
dBm
%
dB
dB
C/W
*1:
Channel to case /
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0919A
L & S BAND / 1W
SMD non - matched
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Publication Date : Apr., 2011
4
Analogue and Mixed Signal
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