SDB20100DI
Schottky Barrier Rectifier
DUAL COMMON CATHODE SCHOTTKY RECTIFIER
Features
Low forward voltage drop and leakage current
Low power loss and High efficiency
High surge capability
Dual common cathode rectifier
Halogen-free component and RoHS compliant device
3
Pin Configuration
Pin 1, 3: Anode
Pin 2, 4: Cathode
1
2, 4
Applications
Power supply - Output rectification
Converter
Free-wheeling diode
Reverse battery protection
Power inverters
TO-252
TO-252
Product Characteristics
I
F(AV)
V
RRM
V
FM
at 125℃
I
FSM
2 x 10A
100V
0.72V
120A
Description
The SDB20100DI has two schottky barriers arranged in a common cathode configuration. Typical
applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery
protection.
Ordering Information
Device
SDB20100DI
Marking Code
SDB20100DI
Package
TO-252
Packaging
Tape & Reel
Marking Information
SDB20100DI = Specific Device Code
YWW = Year & Week Code Marking
-. Y = Year Code
-. WW = Week Code
KSD-D6O019-002
1
SDB20100DI
Absolute Maximum Ratings
(Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
per diode
Maximum average forward rectified current
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
I
FSM
T
stg
T
J
I
F(AV)
20
120
-45℃ to +150℃
150
A
℃
℃
Symbol
V
RRM
V
RWM
V
R
Value
Unit
100
V
10
A
Thermal Characteristics
Characteristic
per diode
Maximum thermal resistance junction to case
total device
R
th(j-c)
3.6
Symbol
Value
4.0
Unit
℃/W
Electrical Characteristics
Characteristic
Peak forward voltage drop
Symbol
V
FM
(1)
Test Condition
T
j
=25℃
I
FM
= 10A
T
j
=125℃
Min.
-
-
-
-
-
Typ.
-
-
-
-
150
Max.
0.85
0.72
20
20
-
Unit
V
V
uA
mA
pF
Reverse leakage current
Junction capacitance
I
RM (1)
C
j
T
j
=25℃
V
R
= V
RRM
T
j
=125℃
V
R
= 10V
DC
, f=1MHz
Note :
(1) Pulse test :
t
P
≤380
㎲,
Duty cycle≤2%
To evaluate the conduction losses use the following equation: P
F
= 0.62 I
F(AV)
+ 0.042 I
F2(RMS)
I
FM
Forward Voltage : V
FM
= V
to
+ rd I
FM
2 I
F(AV)
rd
Conduction Loss : P
F
= V
to
I
F(AV)
+ rd
I
F2(RMS)
I
F(AV)
V
to
V
FM
KSD-D6O019-002
2
SDB20100DI
Rating and Characteristic Curves
Fig. 1) Typical Forward Characteristics (Per Diode)
Fig. 2) Typical Reverse Characteristics (Per Diode)
Fig. 3) Maximum Forward Derative Curve
Fig. 4) Forward Power Dissipation (Per Diode)
Fig. 5) Maximum Non-Repetitive Peak Forward
Surge Current (Per Diode)
Fig. 6) Typical Junction Capacitance (Per Diode)
KSD-D6O019-002
3
SDB20100DI
Package Outline Dimension
※
Recommended Land Pattern [unit: mm]
7.00
1.50
4.60
2.50
7.00
KSD-D6O019-002
4
SDB20100DI
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-D6O019-002
5