8-Line EMI Filter with Integrated ESD Protection
AOZ8040
General Description
The AOZ8040 is an 8-line device integrating EMI filtering
with ESD protection for each line. It is designed to
suppress unwanted EMI/RFI signals and provide electro-
static discharge (ESD) protection in portable electronic
equipment. This state-of-the-art device utilizes AOS
leading edge Trench Vertical Structure [TVS]
2
™
technology for superior clamping performance and filter
attenuation over the full operating display range. The
AOZ8040 has been optimized for protection of color LCD
displays and CCD camera lines in cellular phones and
other portable consumer electronic devices.
The AOZ8040 consists of eight identical circuits
comprised of TVS diodes for ESD protection, and a
resistor–capacitor network for EMI/RFI filtering.
A series resistor value of 100
Ω
and a capacitance
value of 9pF are used to achieve -20dB minimum
attenuation from 1.0GHz to 3.0GHz. The TVS diodes
provide effective suppression of ESD voltages in excess
of ±20kV (air discharge) and ±20kV (contact discharge).
This exceeds IEC 61000-4-2, level 4 ESD immunity test.
The AOZ8040 comes in an RoHS compliant, 1.2mm x
3.5mm, 0.4mm pitch DFN package and is rated over a
-40°C to +85°C ambient temperature range.
Features
●
8 lines for EMI filtering and ESD protection:
–
Exceeds IEC 61000-4-2, level 4 (ESD) immunity test
–
±20kV (air discharge) and ±20kV (contact discharge)
Trench Vertical Structure [TVS]
2
™ based technology
used to achieve excellent ESD clamping & filter
performance over the full operating display range
Filter performance: -20db attenuation from 1.0GHz to
3.0GHz
Low operating voltage: 5.0V
Capacitance stability over wide range of voltages and
temperatures
DFN package: 1.2mm x 3.5mm, 0.4mm pitch
Pb-Free device
Green product
●
●
●
●
●
●
●
Applications
●
●
●
EMI filtering and ESD protection for data lines
LCD displays, camera interface, I/O interface
Portable handheld devices, cell phones,
PDA phones
Typical Application
D0
100Ω
CH1
9pF
9pF
100Ω
D1
CH2
LCD/Camera
Module
9pF
9pF
D7
100Ω
CH8
9pF
9pF
Figure 1.
Rev. 1.2 March 2010
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Page 1 of 7
AOZ8040
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
Storage Temperature (T
S
)
ESD Rating per IEC61000-4-2, contact
(1)
ESD Rating per IEC61000-4-2, air
(1)
ESD Rating per Human Body Model
(2)
Notes:
1. IEC 61000-4-2 discharge with C
Discharge
= 150pF, R
Discharge
= 330
Ω
.
2. Human Body Discharge per MIL-STD-883, Method 3015 C
Discharge
= 100pF, R
Discharge
= 1.5k
Ω
.
Rating
-65°C to +150°C
±20kV
±20kV
±30kV
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
V
RWM
V
BR
I
R
V
CL
Parameter
Reverse Working Voltage
Reverse Breakdown Volt-
age
Reverse Leakage Current
Signal Clamp Voltage
(3)
Conditions
I
T
= 1mA
(4)
V
RWM
= 3.3V
I
LOAD
= 1A, positive clamp
(5)(8)
I
LOAD
= 1A, negative clamp
(5)(8)
I
LOAD
= 5A, positive clamp
(5)(8)
I
LOAD
= 5A, negative clamp
(5)(8)
I
LOAD
= 12A, positive clamp
(5)(8)
I
LOAD
= 12A, negative clamp
(5)(8)
Min.
6
Typ.
7
Max.
5.0
8
0.1
7.0
-3.0
8.0
-5.0
10.0
-10.0
Units
V
V
µA
V
R
CH
C
CH
f
C
Total Series Resistance
Channel Capacitance
Cut-off Frequency
Attenuation from 1.0GHz
to 3.0GHz
I
R
= 20mA
Input to Ground
(6)(7)(8)
Measured with 50
Ω
source and 50
Ω
load
termination
V
R
= 0V Measured with 50
Ω
source and 50
Ω
load termination
90
8
100
9
250
-20
110
10
Ω
pF
MHz
dB
Notes:
3. The working peak reverse voltage, V
RWM
, should be equal to or greater than the DC or continuous peak operating voltage level.
4. V
BR
is measured at the pulse test current I
T
.
5. Measurements performed using a 100ns Transmission Line Pulse (TLP) system.
6. Total capacitance is equal to 2 x C
CH
.
7. Measured at 25°C, V
R
= 2.5V, f = 1.0MHz.
8. Guaranteed by design.
Rev. 1.2 March 2010
www.aosmd.com
Page 3 of 7
AOZ8040
Typical Performance Characteristics
Insertion Loss Characteristics
0
-5
-10
Insertion
Loss (dB)
-15
S21 (db)
-20
-25
-30
-35
-40
-45
-50
-120
1
10
100
Frequency (MHz)
1000
10000
1
10
100
Frequency
(MHz)
1000
10000
-20
-40
-60
-80
0
Crosstalk
(I/O-I/O) vs.
Frequency
-100
Clamping Voltage vs. Peak Pulse Current
11
Forward Voltage vs. Forward Current
12
(t
period
= 100ns, t
r
= 1ns)
(t
period
= 100ns, t
r
= 1ns)
Clamping Voltage, Vcl (V)
10
Forward Voltage (V)
10
9
8
8
6
7
4
6
0
2
4
6
8
10
12
Peak Pulse Current, Ipp (A)
2
0
2
4
6
8
10
12
Forward Current (A)
Typical Resistance vs. Temperature
110
105
Resistance (Ω)
100
95
90
-45
-25
-5
5
25
45
65
85
Temparature (°C)
Rev. 1.2 March 2010
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Page 4 of 7
PCB Design
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