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KDT5001A_0604

Description
Silicon photo transistor
File Size228KB,2 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet View All

KDT5001A_0604 Overview

Silicon photo transistor

Silicon photo transistor
KDT5001A
The KDT5001A is high sensitivity silicon photo
transistor which converts light to electrical signal.
This photo transistor is both COB package and
easy to mount.
Dimensions
[Unit : mm]
Features
Higly sensitive photo transistor
Chip On Board package.
High speed response.
Applications
AV Instrumemts
Touch panels for ATM & FA epuiments
Optical counter
Pin Description
EMITTER
COLECTOR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature*
1
*1.Test Condition : t
3s
[T
A
= 25
Symbol
V
CEO
V
ECO
I
C
P
C
Topr.
Tstg.
Tsol
Rating
30
5
20
75
-5~+50
-20~+80
240
Unit
]
V
V
mA
mW
ELECTRO- OPTICAL CHARACTERISTICS
Description
Dark Current
Photo Current
Symbol
I
CEO
I
PCE
Condition
V
CE
=10V, E
E
=0
V
CE
=5V, E
E
=0.5½/㎠,
PK
=640㎚
Min.
-
1.2
Typ.
-
-
500~1050
Max.
100
2.4
Unit
nA
mA
nm
nm
Spectral Sensitivity
Peek wavelength
Viewing Angle
Collector-Emitter Saturation Voltage
2
p
1/2
V
R
=0V
20
IC=100
, E
E
=0.5mW/cm
2
,
PK
=640nm
880
40
-
200
deg.
mV
V
CE(SAT)
-
-1-
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