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SBT2222

Description
NPN Silicon Transistor
File Size237KB,4 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet View All

SBT2222 Overview

NPN Silicon Transistor

SBT2222
NPN Silicon Transistor
Descriptions
General purpose application
Switching application
PIN Connection
Features
Low Leakage current
Low collector saturation voltage enabling
low voltage operation
Complementary pair with SBT2907
3
1
2
SOT-23
Ordering Information
Type NO.
SBT2222
Marking
1B
① ②
①Device
Code
Year&Week Code
Package Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
* : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
Ratings
60
30
5
600
350
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Ta=25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Test Condition
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=10V, I
C
=10mA
I
C
=150mA, I
B
=15mA
V
CE
=20V, I
C
=20mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=30V
dc
, V
BE(off)
=0.5V
dc
,
I
C
=150mA
dc
, I
B1
=15mA
dc
V
CC
=30V
dc
,I
C
=150mA
dc
,
I
B1
=I
B2
=15mA
dc
Min. Typ. Max.
60
30
5
-
100
-
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
0.4
-
8
10
25
225
60
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
KSD-T5C009-000
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