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SBT3904U

Description
NPN Silicon Transistor
File Size251KB,4 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet View All

SBT3904U Overview

NPN Silicon Transistor

SBT3904U
NPN Silicon Transistor
Descriptions
Small signal application
Switching application
PIN Connection
Features
Low V
CE(SAT)
: 0.3V max @ I
C
=50
High speed switching : t
f
=50
max @ I
C
=10
Complementary pair with SBT3906U
1
2
3
Ordering Information
Type NO.
SBT3904U
Marking
1A
① ②
①Device
Code
Year&Week Code
SOT-323
Package Code
SOT-323
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
J
T
stg
Rating
60
40
6
200
350
150
-55~150
Unit
V
V
V
½
* : Device mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on delay time
Rise time
Storage time
Fall Time
Ta=25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
V
CE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Test Condition
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CE
=30V, V
BE
=-3V
V
CE
=1V, I
C
=10mA
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA,
f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
V
CC
=3V, V
BE(off)
=0.5V
I
C
=10mA, I
B1
=1mA
V
CC
=3V,I
C
=10mA,
I
B1
=-I
B2
=1mA
Min. Typ. Max.
60
40
6
-
100
-
300
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
300
0.3
-
4
35
35
200
50
Unit
V
V
V
-
V
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