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PG24BUS23

Description
Trans Voltage Suppressor Diode, 300W, 24V V(RWM), Unidirectional, 1 Element, Silicon, SOT-23, 3 PIN
Categorysemiconductor    Discrete semiconductor   
File Size392KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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PG24BUS23 Overview

Trans Voltage Suppressor Diode, 300W, 24V V(RWM), Unidirectional, 1 Element, Silicon, SOT-23, 3 PIN

SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG24BUS23
Low Capacitance TVS Diode for ESD
Protection in Portable Electronics
FEATURES
300 Watts peak pulse power (tp=8/20 s)
Transient protection for high-speed data lines to
A
G
L
E
B
L
DIM
A
D
B
C
D
E
G
H
J
K
P
P
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 8A(tp=8/20 s)
Standard SOT-23 Package.
Tow devices will protect one line.
Low capacitance-5pF.
Low clamping voltage.
ESD Protection>25kilovolts.
2
3
H
1
C
N
M
1. RECTIFLER
2. ZENER (TVS)
APPLICATIONS
Cellular Phone Handsets and Accessories.
Microprocessor based equipment.
Personal Digital Assistants (PDA’s)
Notebooks, desktops PC, & servers.
High-Speed data lines.
Portable Instrumentation.
LAN/WAN equipment.
3. N.C.
K
SOT-23
Marking
3
J
Lot No.
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
)
SYMBOL
P
PK
I
PP
T
j
T
stg
RATING
300
8
-55 150
-55 150
2
1
UNIT
W
A
Type Name
24B
2
1
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
C
J
I
t
=1mA
V
RWM
=24V
I
PP
=8A, tp=8/20 s
V
R
=0V, f=1MHz (Pin 2 to 1)
TEST CONDITION
-
MIN.
-
26.7
-
-
-
TYP.
-
-
-
-
-
MAX.
24
-
1
43.5
5
UNIT
V
V
A
V
pF
2006. 11. 8
Revision No : 1
1/2

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