SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
A
Q
TIP35C
TRIPLE DIFFUSED NPN TRANSISTOR
B
K
FEATURES
Recommended for 75W Audio Frequency
Amplifier Output Stage.
Icmax:25A.
D
F
E
I
C
G
d
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25
)
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
100
100
5
25
5.0
125
150
-55 150
UNIT
V
V
V
A
A
W
1
2
3
P
P
T
M
1. BASE
2. COLLECTOR
3. EMITTER
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-emitter Breakdown Voltage
DC Current Gain
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
(1)
V
CE(sat)
(2)
V
BE
f
T
O:80~160
TEST CONDITION
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=50mA, I
B
=0
V
CE
=5V, I
C
=1.5A
V
CE
=4V, I
C
=15A
I
C
=15A, I
B
=1.5A
I
C
=25A, I
B
=5.0A
V
CE
=5V, I
C
=5A
V
CE
=5V, I
C
=1A
MIN.
-
-
100
55
15
-
-
-
3.0
TYP.
-
-
-
-
-
-
-
-
-
MAX.
10
10
-
160
-
1.8
V
4.0
1.5
-
V
MHz
UNIT
A
A
V
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Note : h
FE
(1) Classification R:55~110,
2001. 1. 18
Revision No : 3
L
J
H
Complementary to TIP36C.
DIM
A
B
C
D
d
E
F
G
H
I
J
K
L
M
P
Q
T
MILLIMETERS
15.9 MAX
4.8 MAX
_
20.0 + 0.3
_
2.0 + 0.3
1.0+0.3/-0.25
2.0
1.0
3.3 MAX
9.0
4.5
2.0
1.8 MAX
_
20.5 + 0.5
2.8
_
5.45 + 0.2
_
Φ3.2
+ 0.2
0.6+0.3/-0.1
TO-3P(N)
1/2
ST - Low Power RF
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