2SK3787-01MR
FUJI POWER MOSFET
200311
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
TO-220F
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
Symbol Ratings
800
V
DS
V
DSX
800
I
D
4.2
I
D(puls]
±16.8
V
GS
±30
I
AS
4.2
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
V
ISO
418.9
4.3
40
5
2.16
43
+150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
mJ
kV/s
Remarks
V
GS
=-30V
Tch < 150°C
=
*1
*2
VDS < 800V
=
kV/µs *3
Ta=25°C
W
Tc=25°C
°C
°C
kVrms t=60sec, f=60Hz
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 Starting Tch=25°C,I
AS
=1.7A,L=266mH,Vcc=80V,R
G
=50Ω
E
AS
limited by maximum channel temperature and avalanche current.
See to the ‘Avalanche Energy’ graph.
*2 Repetitive ratimg : Pulse width limited maximum channel temperature.
See to the ‘Transient Thermal impedance’ graph.
*3 I
F
< -I
D
, -di/dt=50A/µs, V
CC
< BV
DSS
, Tch < 150°C
=
=
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
V
DS
=800V V
GS
=0V
T
ch
=25°C
T
ch
=125°C
V
DS
=640V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=2.1A V
GS
=10V
I
D
=2.1A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V I
D
=2.1A
V
GS
=10V
R
GS
=10
Ω
V
CC
=400V
I
D
=4.2A
V
GS
=10V
I
F
=4.2A V
GS
=0V T
ch
=25°C
I
F
=4.2A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
800
3.0
Typ.
Max.
5.0
25
250
100
3.4
670
95
4.5
28
11
49
24
24.0
10.0
4.5
1.50
Units
V
V
µA
nA
Ω
S
pF
2
2.6
4
445
65
3
19
7
32
16
15.5
6.5
3.0
0.90
1.5
5.5
ns
nC
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
2.907
58.0
Units
°C/W
°C/W
1
2SK3787-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
50
45
40
8
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
7
6
35
30
5
20V
10V
8V
6.5V
PD [W]
ID [A]
25
20
15
4
6.0V
3
2
10
5
0
0
25
50
75
100
125
150
1
VGS=5.5V
0
0
4
8
12
16
20
24
28
32
Tc [
°
C]
VDS [V]
10
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
1
ID[A]
gfs [S]
0.1
0
1
2
3
4
5
6
7
8
9
10
1
0.01
0.1
0.01
0.1
1
10
VGS[V]
ID [A]
5.0
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
10
VGS=5.5V
6.0V
6.5V
9
8
8V
10V
20V
7
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=2.1A,VGS=10V
4.5
RDS(on) [
Ω
]
RDS(on) [
Ω
]
4.0
6
5
4
typ.
3
2
max.
3.5
3.0
2.5
0
1
2
3
4
5
6
7
1
0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3787-01MR
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
5.0
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=4.2A,Tch=25
°
C
12
Vcc= 160V
400V
max.
10
640V
VGS(th) [V]
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
Tch [
°
C]
Qg [nC]
10
3
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10
Ciss
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
10
2
C [pF]
IF [A]
Coss
10
1
1
Crss
10
0
10
0
10
1
10
2
10
3
0.1
0.0
0.5
1.0
1.5
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
Ω
450
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=80V,I(AV)<=4.2A
400 I
AS
=1.7A
tf
350
10
2
td(off)
300
I
AS
=2.6A
td(on)
EAV [mJ]
250
200
I
AS
=4.2A
150
t [ns]
10
1
tr
100
50
10
0
10
-1
10
0
10
1
0
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3787-01MR
FUJI POWER MOSFET
10
1
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=80V
Avalanche Current I
AV
[A]
Single Pulse
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
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4
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