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TS868C08R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Repetitive peak reverse voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Note* Out put current of center tap full wave connection.
Note** Rating per element
FUJI Diode
Symbols
V
RRM
Io
I
FSM
Tj
Tstg
Conditions
-
50Hz square wave duty =1/2
Tc =105˚C
Sine wave, 10ms 1shot
-
-
Ratings
80
30*
160
150
-40 to + 150
Units
V
A
A
˚C
˚C
Electrical characteristics
Item
Forward voltage***
Reverse current***
Thermal resistance
Note*** Rating per element
(at Ta=25˚C unless otherwise specified.)
Symbols
V
F
I
R
Rth(j-c)
I
F
= 15 A
V
R
=V
RRM
Junction to case
Conditions
Maximum
0.76
200
1.25
Units
V
µA
˚C/W
Mechanical characteristics
Item
Approximate mass
Conditions
-
Maximum
1.6
Units
g
1
TS868C08R
http://www.fujisemi.com
FUJI Diode
Forward Characteristic
(typ.)
10
5
Reverse Characteristic
(typ.)
Tj=150℃
10
4
10
Tj=125℃
Tj=100℃
（Ａ）
Tj=150℃
1
Tj=125℃
Tj=100℃
Tj=25℃
ＩＦ
Forward Current
Reverse Current
（μＡ）
10
3
10
2
Tj= 25℃
10
1
0.1
ＩR
10
0
10
-1
0.01
0.0
0
10
20
30
40
50
60
70
80
90
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
ＶR
Reverse Voltage
（Ｖ）
ＶＦ
Forward Voltage
（Ｖ）
Forward Power Dissipation (max.)
22
12
Reverse Power Dissipation (max.)
20
360°
11
360°
DC
18
I
0
10
VR
α
（Ｗ）
Reverse Power Dissipation
λ
（Ｗ）
9
16
8
Forward Power Dissipation
14
Square wave
λ=60°
Square wave
λ=120°
7
12
Sine wave
λ=180°
Square wave
λ=180°
6
α=180°
10
DC
5
8
4
6
ＷＦ
4
ＰＲ
2
Per 1element
0
0
2
4
6
8
10
12
14
16
18
3
2
1
0
0
10
20
30
40
50
60
70
80
90
Ｉ½
Average Output Current
（Ａ）
ＶＲ
Reverse Voltage
（Ｖ）
3
TS868C08R
http://www.fujisemi.com
FUJI Diode
Current Derating
160
(Io-Tc) (max.)
1000
Junction Capacitance Characteristic (max.)
150
140
130
（℃）
120
Case Temperature
110
Sine wave
λ=180°
Square wave
λ=180°
Junction Capacitance (pF)
Cj
DC
100
100
Square wave
λ=120°
90
Ｔ½
80
360°
Square wave
λ=60°
70
I
0
λ
VR=40V
60
0
5
10
15
20
25
30
35
40
45
10
1
10
100
1000
Ｉ½
Average Output Current
（Ａ）
λ:Conduction
angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
VR
Reverse Voltage (V)
Surge Capability (max.)
1000
Peak Half - Wave Current
ＩFSM
（Ａ）
100
10
1
10
100
Number of Cycles at 50Hz
4
TS868C08R
http://www.fujisemi.com
FUJI Diode
Surge Current Ratings (max.)
1000
IFSM Peak HAlf-Wave Current (A)
100
10
1
10
t Time
100
(ms) Sinewave
1000
Transient Thermal Impedance (max.)
10
1
Rth(j-c):1.25°C/W
Transient Thermal Impedance (°C/W)
10
0
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec)
5
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