YG868C04R
(45V / 30A)
Low IR Schottky barrier diode
Features
Low IR
Low V
F
Center tap connection
[200509]
Outline drawings, mm
Applications
High frequency operation
DC-DC converters
AC adapter
Package : TO-220F
Epoxy resin UL : V-0
Connection diagram
1
2
3
Maximum ratings and characteristics
Maximum ratings
Item
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive surge current
non-repetitive reverse surge power dissipation
Symbol
V
RSM
V
RRM
Viso
I
o
I
FSM
PRM
T
j
T
stg
Conditions
tw=500ns, duty=1/40
Rating
45
45
Unit
V
V
V
*
A
A
W
°C
°C
Terminals-to-Case, AC.1min.
Square wave, duty=1/2
Tc=105°C
1500
30
160
1000
+150
-40 to +150
Sine wave 10ms
tw=10µs, Tj=25°C
Operating junction temperature
Storage temperature
*
Out put current of center tap full wave connection
Electrical characteristics (at Ta=25°C Unless otherwise specified )
Item
Forward voltage **
Reverse current **
Thermal resistance
Symbol
V
F
I
R
Rth(j-c)
Conditions
I
F
=15A
V
R
=40V
Junction to case
Max.
0.63
200
2.0
Unit
V
µA
°C/W
**Rating per element
Mechanical characteristics
Mounting torque
Approximate mass
http://www.fujielectric.co.jp/fdt/scd/
Recommended torque
0.3 to 0.5
2
N
·
m
g
(45V / 30A )
Characteristics
Forward Characteristic (typ.)
10
10
1
YG868C04R (30A)
Reverse Characteristic (typ.)
Tj=150 C
Tj=125 C
Tj=100 C
10
0
o
o
o
IF Forward Current (A)
1
Tj=150 C
o
Tj=125 C
o
Tj=100 C
Tj=25 C
o
o
IR Reverse Current (mA)
10
-1
Tj= 25 C
-2
o
0.1
10
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10
-3
10
20
30
40
50
VF Forward Voltage (V)
VR Reverse Voltage (V)
24
22
Forward Power Dissipation (max.)
Io
5
Reverse Power Dissipation (max.)
360 º
WF Forward Power Dissipation (W)
18
16
14
λ
PR Reverse Power Dissipation (W)
20
4
VR
360 º
Square wave
λ
=60
o
Square wave
λ
=120
o
12
Sine wave
λ
=180
o
Square wave
λ
=180
10
α
3
DC
8
6
4
2
0
-2
-2
0
2
4
6
8
10
12
Per 1element
14
16
18
2
1
0
0
10
Io Average Forward Current (A)
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
150
140
130
1000
Junction Capacitance Characteristic (max.)
Tc Case Temperature ( C)
120
110
DC
Square wave
λ
=180
o
Junction Capacitance (pF)
o
100
90
80
70
60
50
Sine wave
λ
=180
360 º
o
o
100
Square wave
λ
=120
λ
Io
Square wave
λ
=60
o
VR=20V
Cj
0
5
10
15
20
25
30
35
40
45
10
1
10
100
1000
Io Average Output Current (A)
λ
:Conduction angle of forward current for each rectifier element
VR
Io:Output current of center-tap full wave connection
4321
4321
4321
4321
4321
4321
4321
4321
20
30
40
4321
4321
4321
4321
4321
4321
4321
4321
543210987654321
1
54321098765432
543210987654321
543210987654321
543210987654321
543210987654321
543210987654321
DC
α
=180
o
50
60
Reverse Voltage (V)
(45V / 30A )
YG868C04R (30A)
1000
Surge Capability (max.)
I FSM Peak Half - Wave Current (A)
100
10
1
10
100
Number of Cycles at 50Hz
1000
Surge Current Ratings (max.)
IFSM PeakHAlf-WaveCurrent (A)
100
10
1
10
100
1000
tTime (ms) Sinewave
10
1
Transient Thermal Impedance (max.)
(°C/W)
Rth(j-c):2.0°C/W
Transient Thermal Impedance
10
0
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec)
http://www.fujielectric.co.jp/fdt/scd/
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